IPB160N04S4H1ATMA1

Mfr. #:: IPB160N04S4H1ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB160N04S4H1ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IPB160N04S4H1ATMA1 Datasheet IPB160N04S4H1ATMA1 Datasheet (P4-P6)IPB160N04S4H1ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:: IPB160N04S4H1ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 160 A

Rds On - Drain-Source Resistance:: 1.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 137 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 167 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: xPB160N04

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 33 ns

Product Type:: MOSFET

Rise Time:: 22 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 29 ns

Typical Turn-On Delay Time:: 28 ns

Part # Aliases:: IPB160N04S4-H1 IPB16N4S4H1XT SP000711252

Unit Weight:: 0.056438 oz

Tags: IPB160N04S4, IPB160N04, IPB160, IPB16, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB160N04S4H1ATMA1 Description

***ineon SCT: 40V, N-Ch, 1.6 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

***p One Stop Global: Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) TO-263 T/R

***nell: MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ineon SCT: 40V, N-Ch, 1.3 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

***ure Electronics: Single N-Channel 40 V 1.3 mOhm 135 nC OptiMOS Power Mosfet - D2PAK-7

***ical: Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:40V; On Resistance

***nell: MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 188W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ineon SCT: 40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T, PG-TO263-7, RoHS

***ure Electronics: Single N-Channel 40 V 1.5 mOhm 160 nC OptiMOS Power Mosfet - D2PAK-7

***ow.cn: Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 180A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested

***ark: Mosfet Transistor, N Channel, 320 A, 40 V, 1.6 Mohm, 10 V, 4 V

*** Source Electronics: Trans MOSFET N-CH Si 40V 320A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 40V 160A D2PAK-7

***ure Electronics: Single N-Channel 40 V 1.6 mOhm 170 nC HEXFET® Power Mosfet - D2PAK-7

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package., D2PAK7P, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; 40V; 320A; 1.6 MOHM; 170NC QG; D2-PAK 7-PIN; Pb-Free

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 330 W

***nell: MOSFET, N D2-PAK/7; Transistor Polarity: N Channel; Continuous Drain Current Id: 320A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipatio

IPB160N04S4H1ATMA1 More Information

20V to 40V N-Channel Automotive MOSFETs: Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Market price

Part #	Mfg.	Description	Stock	Price
IPB160N04S4H1ATMA1 DISTI # V72:2272_06383293	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	788	500:$1.1980 250:$1.2730 100:$1.4146 25:$1.6112 10:$1.7594 1:$2.2807
IPB160N04S4H1ATMA1 DISTI # V36:1790_06383293	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.0570 500000:$1.0580 100000:$1.0690 10000:$1.0810 1000:$1.0820
IPB160N04S4H1ATMA1 DISTI # IPB160N04S4H1ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2251In Stock	500:$1.3453 100:$1.6374 10:$2.0370 1:$2.2700
IPB160N04S4H1ATMA1 DISTI # IPB160N04S4H1ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2251In Stock	500:$1.3453 100:$1.6374 10:$2.0370 1:$2.2700
IPB160N04S4H1ATMA1 DISTI # IPB160N04S4H1ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.9454 5000:$0.9702 2000:$1.0076 1000:$1.0822
IPB160N04S4H1ATMA1 DISTI # 33632348	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	230000	1000:$1.1607
IPB160N04S4H1ATMA1 DISTI # 30579472	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1000	11:$2.4875
IPB160N04S4H1ATMA1 DISTI # 31230055	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	788	7:$2.2807
IPB160N04S4H1ATMA1 DISTI # SP000711252	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A 7-Pin TO-263 T/R (Alt: SP000711252) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 8626	6000:€1.0900 10000:€1.0900 4000:€1.1900 2000:€1.2900 1000:€1.6900
IPB160N04S4-H1 DISTI # IPB160N04S4H1ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB160N04S4H1ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.0900 10000:$1.0900 2000:$1.1900 4000:$1.1900 1000:$1.2900
IPB160N04S4H1ATMA1 DISTI # 12AC9703	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	3190	500:$1.2500 250:$1.3400 100:$1.4300 50:$1.5500 25:$1.6700 10:$1.7900 1:$2.1100
IPB160N04S4-H1 DISTI # 726-IPB160N04S4-H1	Infineon Technologies AG	MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 RoHS: Compliant	1684	1:$2.0900 10:$1.7700 100:$1.4200 500:$1.2400 1000:$1.0300 2000:$0.9600 5000:$0.9250
IPB160N04S4H1ATMA1 DISTI # 726-IPB160N04S4H1ATM	Infineon Technologies AG	MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 RoHS: Compliant	3695	1:$2.2700 10:$2.0300 100:$1.6300 500:$1.3400 1000:$1.0900
IPB160N04S4H1ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	4000	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0200 1:$1.1000
IPB160N04S4H1ATMA1 DISTI # 1107438P	Infineon Technologies AG	MOSFET N-CHAN OPTIMOS-T2 40V 160A TO263, RL	8270	500:£0.8530 200:£0.9120 100:£0.9690 20:£1.0920
IPB160N04S4H1ATMA1 DISTI # 2709898	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263	3190	500:£0.8970 250:£0.9640 100:£1.0300 10:£1.2800 1:£1.5200
IPB160N04S4H1ATMA1 DISTI # 2709898	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263 RoHS: Compliant	3190	100:$2.1400 10:$2.6700 1:$3.1500

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IPB160N04S4H1ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes