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IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1
Mfr. #:
IPW65R110CFDAFKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 31.2A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R110CFDAFKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW65R110CFDAFKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
31.2 A
Rds On - Drain-Source Resistance:
99 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
118 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
277.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
68 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
IPW65R110CFDA IPW65R11CFDAXK SP000895236
Unit Weight:
1.340411 oz
Tags
IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 650V 31.2A
***i-Key
MOSFET N-CH 650V 31.2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		219In Stock
  • 720:$5.6983
  • 240:$6.6906
  • 10:$8.0130
  • 1:$8.8400
IPW65R110CFDAFKSA1
DISTI # SP000895236		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 48
  • 1:€4.4900
  • 10:€4.0900
  • 25:€3.9900
  • 50:€3.7900
  • 100:€3.6900
  • 500:€3.4900
  • 1000:€3.2900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$4.2900
  • 480:$4.0900
  • 960:$3.9900
  • 1440:$3.7900
  • 2400:$3.7900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDA		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R110CFDAFKSA1
    DISTI # 13AC9100    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes15
    • 100:$5.3600
    • 50:$5.7700
    • 25:$6.1700
    • 10:$6.4700
    • 1:$7.1600
    IPW65R110CFDAFKSA1
    DISTI # 726-IPW65R110CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		348
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDA
    DISTI # 726-IPW65R110CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		263
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 720:$8.1800
    • 240:$9.7600
    • 10:$11.8700
    • 1:$13.1800
    IPW65R110CFDAFKSA1
    DISTI # XSKDRABV0042852    		Infineon Technologies AG 
    RoHS: Compliant    		192
    • 192:$5.3600
    • 87:$5.7400
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 100:£4.1000
    • 50:£4.4100
    • 10:£4.7100
    • 5:£5.4700
    • 1:£6.0000
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    Availability
    Stock:
    267
    On Order:
    2250
    Enter Quantity:
    Current price of IPW65R110CFDAFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.15
    $7.15
    10
    $6.46
    $64.60
    25
    $6.16
    $154.00
    100
    $5.35
    $535.00
    250
    $5.11
    $1 277.50
    500
    $4.66
    $2 330.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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