IPW65R110CFDA stock, IPW65R110CFDA, IPW65R110CFDA


PartNumber	IPW65R110CFDA	IPW65R110CFDAFKSA1	IPW65R110CFDA , 2SJ289
Description	MOSFET N-Ch 650V 31.2A TO247-3	MOSFET N-Ch 650V 31.2A TO247-3
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-247-3	TO-247-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	650 V	650 V	-
Id Continuous Drain Current	31.2 A	31.2 A	-
Rds On Drain Source Resistance	99 mOhms	99 mOhms	-
Vgs th Gate Source Threshold Voltage	3.5 V	3.5 V	-
Vgs Gate Source Voltage	20 V	20 V	-
Qg Gate Charge	118 nC	118 nC	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	277.8 W	277.8 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	CoolMOS	CoolMOS	-
Packaging	Tube	Tube	-
Height	21.1 mm	21.1 mm	-
Length	16.13 mm	16.13 mm	-
Series	CoolMOS CFDA	CoolMOS CFDA	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	5.21 mm	5.21 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Fall Time	6 ns	6 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	11 ns	11 ns	-
Factory Pack Quantity	240	240	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	68 ns	68 ns	-
Typical Turn On Delay Time	16 ns	16 ns	-
Part # Aliases	IPW65R110CFDAFKSA1 IPW65R11CFDAXK SP000895236	IPW65R110CFDA IPW65R11CFDAXK SP000895236	-
Unit Weight	1.340411 oz	1.340411 oz	-

Search Part Number : "IPW65R110CFDA", Match & Start with "IPW65R110CFDA" - Total : 5

Manufacturer	Part #	Description
Infineon Technologies	IPW65R110CFDA	MOSFET N-Ch 650V 31.2A TO247-3
	IPW65R110CFDAFKSA1	MOSFET N-Ch 650V 31.2A TO247-3
	IPW65R110CFDAFKSA1	RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
	IPW65R110CFDA	Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247
	IPW65R110CFDA , 2SJ289	New and Original

IPW65R110CFDA