OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSC100N06LS3GATMA1

BSC100N06LS3GATMA1
Mfr. #:
BSC100N06LS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC100N06LS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC100N06LS3GATMA1 DatasheetBSC100N06LS3GATMA1 Datasheet (P4-P6)BSC100N06LS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
10 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
34 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
32 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
58 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
BSC100N06LS3 BSC1N6LS3GXT G SP000453664
Unit Weight:
0.007055 oz
Tags
BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
***ure Electronics
Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel PowerTrench® MOSFET 60V, 42A, 7.4mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 42A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 14A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimizedfor low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***nell
MOSFET, N-CH, 60V, 42A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.6V; Power Dissipation Pd: 69W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
Mosfet Transistor, N Channel, 12 A, 60 V, 9.4 Mohm, 10 V, 4.9 V
***ure Electronics
Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 12A; 9.4 MOHM; 26 NC QG; SO-8; Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***nell
MOSFET, N, 60V, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipa
***roFlash
Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N CH, 60V, 14A, TO-252-3
***ark
N Channel Mosfet, 60V, 14A, D-Pak, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: No
***et
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
***i-Key
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 60V, 14A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Part # Mfg. Description Stock Price
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$0.4243
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3339
  • 10000:$0.3219
  • 20000:$0.3099
  • 30000:$0.2999
  • 50000:$0.2939
BSC100N06LS3GATMA1
DISTI # 47W3311		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes3102
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
  • 2500:$0.4110
  • 10000:$0.3860
BSC100N06LS3 G
DISTI # 726-BSC100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1
DISTI # 726-BSC100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3550
BSC100N06LS3GATMA1
DISTI # 7545298		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK1395
  • 5:£0.5760
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 7545298P		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL1270
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		7982
  • 5:£0.4240
  • 25:£0.3630
  • 100:£0.2870
  • 250:£0.2780
  • 500:£0.2680
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		3102
  • 1:$1.5300
  • 10:$1.2900
  • 100:$0.9870
Image Part # Description
TPD2E2U06DRLR

Mfr.#: TPD2E2U06DRLR

OMO.#: OMO-TPD2E2U06DRLR

 TVS Diodes / ESD Suppressors Dual-Ch High-Speed ESD Protection
MAX6863UK26+T

Mfr.#: MAX6863UK26+T

OMO.#: OMO-MAX6863UK26-T

 Supervisory Circuits Single nPower Supervisor
BSC014N06NSTATMA1

Mfr.#: BSC014N06NSTATMA1

OMO.#: OMO-BSC014N06NSTATMA1

 MOSFET DIFFERENTIATED MOSFETS
2N7002-7-F

Mfr.#: 2N7002-7-F

OMO.#: OMO-2N7002-7-F

 MOSFET 60V 200mW
AC0402JR-072K4L

Mfr.#: AC0402JR-072K4L

OMO.#: OMO-AC0402JR-072K4L

 Thick Film Resistors - SMD 2.4K ohm 5% 50V AEC-Q200
RN732BTTD49R9B25

Mfr.#: RN732BTTD49R9B25

OMO.#: OMO-RN732BTTD49R9B25-1092

 Thin Film Resistors - SMD 49.9Ohm,1206,0.1%,25 ppm,125mW,150V
CPF0603F60K4C1

Mfr.#: CPF0603F60K4C1

OMO.#: OMO-CPF0603F60K4C1-TE-CONNECTIVITY-AMP

 Thin Film Resistors - SMD 60.4KOhm .063W 50PPM
2N7002-7-F

Mfr.#: 2N7002-7-F

OMO.#: OMO-2N7002-7-F-DIODES

 MOSFET N-CH 60V 115MA SOT23-3
1556854

Mfr.#: 1556854

OMO.#: OMO-1556854-PHOENIX-CONTACT

 Circular Metric Connectors SACC-DSIV-M12 FS-8CON-L180
BSC093N04LSGATMA1

Mfr.#: BSC093N04LSGATMA1

OMO.#: OMO-BSC093N04LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 49A TDSON-8
Availability
Stock:
Available
On Order:
1990
Enter Quantity:
Current price of BSC100N06LS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.90
$0.90
10
$0.77
$7.71
100
$0.59
$59.20
500
$0.52
$261.50
1000
$0.41
$413.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top