BSC014N06NSTATMA1

Mfr. #:: BSC014N06NSTATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET DIFFERENTIATED MOSFETS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC014N06NSTATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BSC014N06NSTATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.45 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 89 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 156 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Forward Transconductance - Min:: 75 S

Fall Time:: 11 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 43 ns

Typical Turn-On Delay Time:: 23 ns

Part # Aliases:: BSC014N06NST SP001657072

Tags: BSC014N06, BSC014N0, BSC014, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC014N06NSTATMA1 Description

***et Europe: OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R

***ical: Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP Tape

***ronik: N-CH 60V 100A 1,45mOhm TDSON-8

***i-Key: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 60V, 100A, 188W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0012Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 188W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:188W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 60V, 100A, 188W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0012ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:188W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

BSC014N06NSTATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Part #	Mfg.	Description	Stock	Price
BSC014N06NSTATMA1 DISTI # V72:2272_19084604	Infineon Technologies AG	BSC014N06NST	99	25:$2.1130 10:$2.3480 1:$3.0360
BSC014N06NSTATMA1 DISTI # V36:1790_19084604	Infineon Technologies AG	BSC014N06NST	0	5000000:$1.2230 2500000:$1.2250 500000:$1.2940 50000:$1.3960 5000:$1.4120
BSC014N06NSTATMA1 DISTI # BSC014N06NSTATMA1CT-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5602In Stock	1000:$1.5903 500:$1.8856 100:$2.2150 10:$2.7030 1:$3.0100
BSC014N06NSTATMA1 DISTI # BSC014N06NSTATMA1DKR-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5602In Stock	1000:$1.5903 500:$1.8856 100:$2.2150 10:$2.7030 1:$3.0100
BSC014N06NSTATMA1 DISTI # BSC014N06NSTATMA1TR-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$1.4116
BSC014N06NSTATMA1 DISTI # 33708275	Infineon Technologies AG	BSC014N06NST	5000	5000:$1.3429
BSC014N06NSTATMA1 DISTI # 32446481	Infineon Technologies AG	BSC014N06NST	99	5:$3.0360
BSC014N06NSTATMA1 DISTI # BSC014N06NSTATMA1	Infineon Technologies AG	OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC014N06NSTATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	30000:$1.2900 50000:$1.2900 10000:$1.3900 20000:$1.3900 5000:$1.4900
BSC014N06NSTATMA1 DISTI # SP001657072	Infineon Technologies AG	OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R (Alt: SP001657072) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€1.0900 30000:€1.1900 20000:€1.2900 10000:€1.3900 5000:€1.6900
BSC014N06NSTATMA1 DISTI # 93AC6982	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, 188W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	0	500:$1.7600 250:$1.9600 100:$2.0600 50:$2.1700 25:$2.2800 10:$2.3800 1:$2.8100
BSC014N06NSTATMA1 DISTI # 726-BSC014N06NSTATM1	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	2050	1:$2.7800 10:$2.3600 100:$2.0400 250:$1.9400 500:$1.7400
BSC014N06NSTATMA1 DISTI # 2986392	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, 188W, TDSON RoHS: Compliant	4482	1000:$2.1500 500:$2.1600 250:$2.3700 100:$2.5400 10:$3.0100 1:$3.8700
BSC014N06NSTATMA1 DISTI # 2986392	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, 188W, TDSON	4907	500:£1.2600 250:£1.4100 100:£1.4800 10:£1.7100 1:£2.2700

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Availability

Stock:: 17
On Order:: 2000
Enter Quantity:

Current price of BSC014N06NSTATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.78~~; ~~$2.78~~

10: ~~$2.36~~; ~~$23.60~~

100: ~~$2.04~~; ~~$204.00~~

250: ~~$1.94~~; ~~$485.00~~

500: ~~$1.74~~; ~~$870.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes