IPD70R600P7SAUMA1

IPD70R600P7SAUMA1
Mfr. #:
IPD70R600P7SAUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPD70R600P7SAUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD70R600P7SAUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
700 V
Id - Continuous Drain Current:
8.5 A
Rds On - Drain-Source Resistance:
490 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
10.5 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
43.1 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
23 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
5.5 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
63 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPD70R600P7S SP001491636
Unit Weight:
0.011993 oz
Tags
IPD70R600P, IPD70R6, IPD70R, IPD70, IPD7, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 700V, 8.5A, 150Deg C/43.1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; On Resistance Rds(On):0.49Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Developed to serve todays and especially tomorrows trends in flyback topologies the new 700V CoolMOS P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS P7 enables best fit for target applications in terms of: | Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
700V CoolMOS™ P7 MOSFETs
Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPD70R600P7SAUMA1
DISTI # V72:2272_16668136
Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
  • 500:$0.3545
  • 250:$0.3938
  • 100:$0.4084
  • 25:$0.6002
  • 10:$0.6016
  • 1:$0.7022
IPD70R600P7SAUMA1
DISTI # V36:1790_16668136
Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R0
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 2500:$0.3841
    IPD70R600P7SAUMA1
    DISTI # 30281696
    Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R2500
    • 2500:$0.2640
    IPD70R600P7SAUMA1
    DISTI # 27460734
    Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
    • 500:$0.3811
    • 250:$0.4233
    • 100:$0.4390
    • 25:$0.6452
    • 24:$0.6467
    IPD70R600P7SAUMA1
    DISTI # SP001491636
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: SP001491636)
    RoHS: Compliant
    Min Qty: 2500
    Europe - 50
    • 2500:€0.3979
    • 5000:€0.3249
    • 10000:€0.2979
    • 15000:€0.2749
    • 25000:€0.2559
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Tape and Reel (Alt: IPD70R600P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.3099
    • 5000:$0.2979
    • 10000:$0.2879
    • 15000:$0.2779
    • 25000:$0.2729
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7S
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: IPD70R600P7S)
    RoHS: Compliant
    Min Qty: 2500
    Asia - 0
      IPD70R600P7SAUMA1
      DISTI # 16AC3358
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2863
      • 1000:$0.3450
      • 500:$0.3740
      • 250:$0.4020
      • 100:$0.4310
      • 50:$0.5100
      • 25:$0.5890
      • 10:$0.6680
      • 1:$0.8000
      IPD70R600P7SAUMA1
      DISTI # 726-IPD70R600P7AUMA1
      Infineon Technologies AGMOSFET
      RoHS: Compliant
      4722
      • 1:$0.8000
      • 10:$0.6680
      • 100:$0.4310
      • 1000:$0.3450
      IPD70R600P7SAUMA1
      DISTI # 2750412
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant
      2863
      • 100:£0.4150
      • 25:£0.6580
      • 5:£0.7230
      IPD70R600P7SAUMA1
      DISTI # 2750412
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant
      2863
      • 1000:$0.5800
      • 500:$0.7250
      • 100:$0.9780
      • 10:$1.2700
      • 1:$1.4600
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      Availability
      Stock:
      Available
      On Order:
      1986
      Enter Quantity:
      Current price of IPD70R600P7SAUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.80
      $0.80
      10
      $0.67
      $6.68
      100
      $0.43
      $43.10
      1000
      $0.34
      $345.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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