BSC020N03MSGATMA1

BSC020N03MSGATMA1
Mfr. #:
BSC020N03MSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
Lifecycle:
New from this manufacturer.
Datasheet:
BSC020N03MSGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC020N03MSGATMA1 DatasheetBSC020N03MSGATMA1 Datasheet (P4-P6)BSC020N03MSGATMA1 Datasheet (P7-P9)BSC020N03MSGATMA1 Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
1.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
60 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
96 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3M
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
60 S
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
36 ns
Typical Turn-On Delay Time:
27 ns
Part # Aliases:
BSC020N03MS BSC2N3MSGXT G SP000311503
Unit Weight:
0.005573 oz
Tags
BSC020N03MSG, BSC020N03M, BSC020N03, BSC020N0, BSC020, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Part # Mfg. Description Stock Price
BSC020N03MSGATMA1
DISTI # V72:2272_06384497
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
14781
  • 6000:$0.5427
  • 3000:$0.5754
  • 1000:$0.5814
  • 500:$0.7105
  • 250:$0.7914
  • 100:$0.8004
  • 25:$0.9897
  • 10:$1.0018
  • 1:$1.1348
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10100In Stock
  • 1000:$0.7495
  • 500:$0.9493
  • 100:$1.2241
  • 10:$1.5490
  • 1:$1.7500
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10100In Stock
  • 1000:$0.7495
  • 500:$0.9493
  • 100:$1.2241
  • 10:$1.5490
  • 1:$1.7500
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.6452
BSC020N03MSGATMA1
DISTI # 26195476
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
14781
  • 6000:$0.5420
  • 3000:$0.5746
  • 1000:$0.5805
  • 500:$0.7092
  • 250:$0.7899
  • 100:$0.7988
  • 25:$0.9873
  • 13:$0.9995
BSC020N03MSGATMA1
DISTI # 29543870
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.6475
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP - Tape and Reel (Alt: BSC020N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5079
  • 10000:$0.4899
  • 20000:$0.4719
  • 30000:$0.4559
  • 50000:$0.4479
BSC020N03MSGATMA1
DISTI # 60R2480
Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes458
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MS G
DISTI # 726-BSC020N03MSG
Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant
4204
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MSGATMA1
DISTI # 726-BSC020N03MSGATMA
Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant
4525
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 25A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
8000
  • 1000:$0.5500
  • 500:$0.5800
  • 100:$0.6100
  • 25:$0.6300
  • 1:$0.6800
BSC020N03MSGATMA1
DISTI # 7545235P
Infineon Technologies AGMOSFET N-CHANNEL 30V 25A OPTIMOS3 TDSON8, RL64
  • 20:£0.8150
  • 40:£0.7700
  • 100:£0.6850
  • 500:£0.6100
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,25A,96W,PG-TDSON-84522
  • 1:$0.3400
  • 3:$0.3367
  • 10:$0.3360
  • 100:$0.3357
BSC020N03MSGATMA1
DISTI # 1775430
Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant
458
  • 5:£0.8160
  • 25:£0.7320
  • 100:£0.7050
  • 250:£0.6780
  • 500:£0.6510
BSC020N03MSGATMA1
DISTI # C1S322000595950
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
14781
  • 250:$0.8159
  • 100:$0.8185
  • 25:$1.0028
  • 10:$1.0074
BSC020N03MSGATMA1
DISTI # C1S322000470934
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.5730
BSC020N03MSGATMA1
DISTI # 1775430
Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant
458
  • 1:$2.3000
  • 10:$1.9700
  • 100:$1.5100
  • 500:$1.3300
  • 1000:$1.0500
  • 5000:$0.9490
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of BSC020N03MSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.44
$1.44
10
$1.23
$12.30
100
$0.95
$94.90
500
$0.84
$419.00
1000
$0.66
$662.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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