NTD3817NT4G

Mfr. #:: NTD3817NT4G
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 16V 7.6A DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: NTD3817NT4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTD3817NT4G Datasheet NTD3817NT4G Datasheet (P4-P6)NTD3817NT4G Datasheet (P7-P8)
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Tags: NTD3817, NTD381, NTD38, NTD3, NTD

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NTD3817NT4G Description

***emi: Power MOSFET 16V, 34.5A Single N-Channel

***ponent Stockers USA: 7.6 A 16 V 0.029 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK

***et: Trans MOSFET N-CH 25V 10.5A 3-Pin(2+Tab) DPAK T/R

***r Electronics: Power Field-Effect Transistor, 8.5A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Power MOSFET 25 V, 45 A, Single N-Channel, DPAK

***et: Trans MOSFET N-CH 25V 9.2A 3-Pin (2+Tab) DPAK T/R

***ser: MOSFETs- Power and Small Signal 25V 45A N-Channel

***r Electronics: Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:45A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):11.7mohm; Rds(on) Test Voltage, Vgs:11.5V; Threshold Voltage, Vgs Typ:1.7V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes

***ser: MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 25V 7.8A/32A DPAK

*** Electronics: N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

***(Formerly Allied Electronics): MOSFET, 55V, 24A, 40 mOhm, 16.7 nC Qg, Logic Level, D-Pak

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***C: Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK

*** Stop Electro: Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***nell: MOSFET, N-CH, 55V, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Di

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

***ure Electronics: N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11

***ical: Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon SCT: 55V, N-Ch, 35 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V;

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Part #	Mfg.	Description	Stock	Price
NTD3817NT4G DISTI # NTD3817NT4G-ND	ON Semiconductor	MOSFET N-CH 16V 7.6A DPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
NTD3817NT4G	ON Semiconductor	Power Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	75000	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100

Image	Part #	Description
	Mfr.#: NTD3808N-1G OMO.#: OMO-NTD3808N-1G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 12A IPAK
	Mfr.#: NTD3808N-35G OMO.#: OMO-NTD3808N-35G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 12A IPAK
	Mfr.#: NTD3808NT4G OMO.#: OMO-NTD3808NT4G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 12A DPAK
	Mfr.#: NTD3813N-1G OMO.#: OMO-NTD3813N-1G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 9.6A IPAK
	Mfr.#: NTD3813N-35G OMO.#: OMO-NTD3813N-35G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 9.6A IPAK
	Mfr.#: NTD3813NT4G OMO.#: OMO-NTD3813NT4G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 9.6A DPAK
	Mfr.#: NTD3817N-1G OMO.#: OMO-NTD3817N-1G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 7.6A IPAK
	Mfr.#: NTD3817N-35G OMO.#: OMO-NTD3817N-35G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 7.6A IPAK
	Mfr.#: NTD3817NT4G OMO.#: OMO-NTD3817NT4G-ON-SEMICONDUCTOR	MOSFET N-CH 16V 7.6A DPAK

NTD3817NT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes