NTD3817NT4G

NTD3817N
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4
TYPICAL PERFORMANCE CURVES
10 V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 125°C
V
GS
= 4.5 V
V
GS
= 0 V
I
D
= 15 A
V
GS
= 10 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
3.8 V
3.0 V
3.6 V
3.2 V
3.4 V
4.5 V
I
D
= 15 A
T
J
= 25°C
V
GS
= 10 V
T
J
= 25°C
0
5
10
15
20
25
30
35
0 0.5 1 1.5 2 3
0
5
10
15
123 45
20
25
30
35
0.01
0.02
0.03
0.04
34567
0.000
0.015
10 20 30 405152535
0.005
0.020
0.010
0.025
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
1.6
-25 25 75 125 175
100
1000
5791113
10000
0.005
0.015
0.025
0.035
10
2.5
4.0 V
6 V
8910
0.05
0.06
0.045
0.055
0.030
15
NTD3817N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
08122
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
4
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
V
GS
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Q
G
, TOTAL GATE CHARGE (nC)
I
D
= 15 A
T
J
= 25°C
Q
2
Q
1
Q
T
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 12 V
I
D
= 15 A
V
GS
= 10 V
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
16
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 10 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
0
100
200
300
400
500
600
700
800
900
1000
0461028
0
2
4
6
8
10
35 917
1 10 100
1
10
100
1000
0.5 0.6 1.0
0
4
8
12
2
6
10
0.4 0.8
0.1 10 100
0.1
10
1000
1 25 125 175
2.5
5.0
0
75
10
12.5
7.5
100 15050
61014 1211
15
1413
14
0.7 0.9
100
1
NTD3817N
http://onsemi.com
6
ORDERING INFORMATION
Device Package Shipping
NTD3817NT4G DPAK
(Pb-Free)
2500 / Tape & Reel
NTD3817N-1G IPAK
(Pb-Free)
75 Units / Rail
NTD3817N-35G IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb-Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD3817NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 16V 7.6A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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