NTD3817NT4G

© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1 Publication Order Number:
NTD3817N/D
NTD3817N
Power MOSFET
16 V, 34.5 A, Single N-Channel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These are Pb-Free Devices
Applications
DC-DC Converters
High Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
16 V
Gate-to-Source Voltage V
GS
±16 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
10.8
A
T
A
= 85°C 8.4
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.5 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
7.6
A
T
A
= 85°C 5.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.2 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
34.5
A
T
C
= 85°C 26.8
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
25.9 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
78 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
22 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+175
°C
Source Current (Body Diode) I
S
21.6 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 10 A
pk
, L = 0.3 mH, R
G
= 25 W)
EAS 15 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
16 V
13.9 mW @ 10 V
34.5 A
29 mW @ 4.5 V
G
S
N-CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
YWW
38
17NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
38
17NG
YWW
38
17NG
Y = Year
WW = Work Week
3817N = Device Code
G = Pb-Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1
2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
NTD3817N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction-to-Case (Drain)
R
q
JC
5.8
°C/W
Junction-to-TAB (Drain)
R
q
JC-TAB
4.5
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
59
Junction-to-Ambient – Steady State (Note 2)
R
q
JA
121
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
16 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
15.5
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±16 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.1
mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 15 A 12.8 13.9
mW
V
GS
= 4.5 V I
D
= 15 A 19.2 29
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 28 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
702
pF
Output Capacitance C
OSS
257
Reverse Transfer Capacitance C
RSS
168
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A
7.0 10.5
nC
Threshold Gate Charge Q
G(TH)
0.6
Gate-to-Source Charge Q
GS
2.5
Gate-to-Drain Charge Q
GD
3.5
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 12 V, I
D
= 15 A 13.5 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
12
ns
Rise Time t
r
50
Turn-Off Delay Time t
d(OFF)
12
Fall Time t
f
4.6
Turn-On Delay Time t
d(ON)
V
GS
= 10 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
8.0
ns
Rise Time t
r
47
Turn-Off Delay Time t
d(OFF)
20
Fall Time t
f
10
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
NTD3817N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C 0.96 1.1
V
T
J
= 125°C 0.86
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 15 A
11
ns
Charge Time t
a
5.4
Discharge Time t
b
5.6
Reverse Recovery Charge Q
RR
2.8 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 5) L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
1.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm

NTD3817NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 16V 7.6A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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