IPA65R660CFDXKSA2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

660 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

22 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

27.8 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Series:

CFD2

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

IPA65R660CFD

Tags

IPA65R66, IPA65R6, IPA65R, IPA65, IPA6, IPA