IPB020NE7N3 G

Mfr. #:: IPB020NE7N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB020NE7N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPB020NE7N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.3 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 155 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Type:: OptiMOS 3 Power-Transistor

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 98 S

Fall Time:: 22 ns

Product Type:: MOSFET

Rise Time:: 26 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 70 ns

Typical Turn-On Delay Time:: 19 ns

Part # Aliases:: IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950

Unit Weight:: 0.139332 oz

Tags: IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB020NE7N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB020NE7N3GATMA1 DISTI # V72:2272_06377372	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.7250 500:$3.3590 250:$3.9820 100:$4.0220 25:$4.9509 10:$5.0010 1:$6.1787
IPB020NE7N3GATMA1 DISTI # V36:1790_06377372	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.3000 500000:$2.3020 100000:$2.4680 10000:$2.7450 1000:$2.7900
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3171In Stock	500:$3.5450 100:$4.1643 10:$5.0830 1:$5.6600
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3171In Stock	500:$3.5450 100:$4.1643 10:$5.0830 1:$5.6600
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	2000:$2.7575 1000:$2.9027
IPB020NE7N3GATMA1 DISTI # 32911882	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.4235
IPB020NE7N3GATMA1 DISTI # 32914046	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	3:$6.1787
IPB020NE7N3 G DISTI # IPB020NE7N3G	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G) RoHS: Not Compliant Min Qty: 139 Container: Bulk	Americas - 0	695:$2.4900 1390:$2.4900 417:$2.5900 278:$2.6900 139:$2.7900
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1) RoHS: Compliant Min Qty: 142 Container: Bulk	Americas - 0	710:$2.1900 1420:$2.1900 426:$2.2900 284:$2.3900 142:$2.4900
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.4900 10000:$2.4900 4000:$2.5900 2000:$2.6900 1000:$2.7900
IPB020NE7N3GATMA1 DISTI # SP000676950	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.0900 6000:€2.2900 4000:€2.3900 2000:€2.4900 1000:€2.5900
IPB020NE7N3GATMA1 DISTI # 85X6012	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes	0
IPB020NE7N3 G DISTI # 726-IPB020NE7N3GXT	Infineon Technologies AG	MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	525	1:$5.2200 10:$4.4400 100:$3.8500 250:$3.6500 500:$3.2700 1000:$2.7600 2000:$2.6200
IPB020NE7N3G	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	5948	1000:$2.5900 500:$2.7300 100:$2.8400 25:$2.9600 1:$3.1900
IPB020NE7N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	10245	1000:$2.3300 500:$2.4500 100:$2.5500 25:$2.6600 1:$2.8700
IPB020NE7N3GATMA1 DISTI # 8259213P	Infineon Technologies AG	MOSFET N-CH 120A 75V OPTIMOS3 TO263, RL	1630	25:£2.0800
IPB020NE7N3GATMA1 DISTI # 8259213	Infineon Technologies AG	MOSFET N-CH 120A 75V OPTIMOS3 TO263, PK	150	25:£2.0800 5:£2.1340
IPB020NE7N3GATMA1 DISTI # IPB020NE7N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3	379	100:$1.9933 10:$2.3875 3:$2.5902 1:$2.7816
IPB020NE7N3 G DISTI # TMOSP10315	Infineon Technologies AG	N-CH75V 120A2mOhm TO263-3 RoHS: Compliant	Stock DE - 2005Stock HK - 0Stock US - 0	1000:$2.6000
IPB020NE7N3GATMA1 DISTI # 2443378	Infineon Technologies AG	MOSFET, N CH, 75V, 120A, TO-263-3 RoHS: Compliant	0	1000:$4.1600 500:$4.9300 250:$5.5000 100:$5.8000 10:$6.6900 1:$7.8700
IPB020NE7N3GATMA1 DISTI # 2443378RL	Infineon Technologies AG	MOSFET, N CH, 75V, 120A, TO-263-3 RoHS: Compliant	0	1000:$4.1600 500:$4.9300 250:$5.5000 100:$5.8000 10:$6.6900 1:$7.8700

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IPB020NE7N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes