IPB65R310CFDATMA1

IPB65R310CFDATMA1
Mfr. #:
IPB65R310CFDATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB65R310CFDATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB65R310CFDATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
11.4 A
Rds On - Drain-Source Resistance:
280 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
41 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
104.2 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
7.5 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
45 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPB65R310CFD IPB65R31CFDXT SP000745032
Unit Weight:
0.139332 oz
Tags
IPB65R310CFDA, IPB65R31, IPB65R3, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 650V 11.4A 3-Pin TO-263 T/R
***i-Key
LOW POWER_LEGACY
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 11.4A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104.2W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 11,4A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:104.2W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPB65R310CFDATMA1
DISTI # V72:2272_06382969
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
668
  • 500:$1.3103
  • 250:$1.4925
  • 100:$1.5082
  • 25:$1.8660
  • 10:$1.8862
  • 1:$2.2019
IPB65R310CFDATMA1
DISTI # V36:1790_06382969
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    On Order
    • 5000:$1.1580
    • 2000:$1.2026
    • 1000:$1.2916
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 500:$1.6056
    • 100:$2.0644
    • 10:$2.5690
    • 1:$2.8400
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 500:$1.6056
    • 100:$2.0644
    • 10:$2.5690
    • 1:$2.8400
    IPB65R310CFDATMA1
    DISTI # 32874623
    Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    668
    • 500:$1.4086
    • 250:$1.6044
    • 100:$1.6213
    • 25:$2.0059
    • 10:$2.0277
    • 6:$2.3670
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R310CFDATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$1.1659
    • 2000:$1.1239
    • 4000:$1.0839
    • 6000:$1.0469
    • 10000:$1.0279
    IPB65R310CFDATMA1
    DISTI # SP000745032
    Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263 (Alt: SP000745032)
    RoHS: Compliant
    Min Qty: 1000
    Europe - 0
    • 1000:€1.3479
    • 2000:€1.1229
    • 4000:€1.0369
    • 6000:€0.9629
    • 10000:€0.8989
    IPB65R310CFDATMA1
    DISTI # 34AC1659
    Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:11.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$1.4100
    • 250:$1.5200
    • 100:$1.6200
    • 50:$1.7500
    • 25:$1.8900
    • 10:$2.0200
    • 1:$2.3800
    IPB65R310CFDATMA1
    DISTI # 726-IPB65R310CFDATMA
    Infineon Technologies AGMOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant
    980
    • 1:$2.3800
    • 10:$2.0200
    • 100:$1.6200
    • 500:$1.4100
    • 1000:$1.1700
    • 2000:$1.0900
    • 5000:$1.0500
    IPB65R310CFD
    DISTI # 726-IPB65R310CFD
    Infineon Technologies AGMOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant
    0
    • 1:$2.3800
    • 10:$2.0200
    • 100:$1.6200
    • 500:$1.4100
    • 1000:$1.1700
    • 2000:$1.0900
    • 5000:$1.0500
    IPB65R310CFDATMA1
    DISTI # 2781165
    Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263
    RoHS: Compliant
    0
    • 100:$2.0300
    • 10:$2.2900
    • 1:$2.4500
    IPB65R310CFDATMA1
    DISTI # 2781165
    Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263
    RoHS: Compliant
    0
    • 500:£1.1000
    • 250:£1.1800
    • 100:£1.2600
    • 10:£1.5900
    • 1:£2.1200
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    Availability
    Stock:
    Available
    On Order:
    1985
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    Current price of IPB65R310CFDATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.38
    $2.38
    10
    $2.02
    $20.20
    100
    $1.62
    $162.00
    500
    $1.41
    $705.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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