FPF2G120BF07AS

Mfr. #:: FPF2G120BF07AS
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Modules High Power Module
Lifecycle:: New from this manufacturer.
Datasheet:: FPF2G120BF07AS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: FPF2G120BF07AS more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Modules

RoHS:: Y

Product:: IGBT Silicon Modules

Configuration:: Triple

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.55 V

Continuous Collector Current at 25 C:: 40 A

Gate-Emitter Leakage Current:: 2 uA

Pd - Power Dissipation:: 98 W, 140 W, 156 W

Package / Case:: F2

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tray

Series:: FPF2G120BF07AS

Brand:: ON Semiconductor / Fairchild

Mounting Style:: SMD/SMT

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 70

Subcategory:: IGBTs

Unit Weight:: 1.587328 oz

Tags: FPF2G, FPF2, FPF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FPF2G120BF07AS Description

***emi: Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A

***ical: Trans IGBT Module N=-CH 650V 40A 156000mW 17-Pin Case F2 Tray

***ark: HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE

***rchild Semiconductor: The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting method.

FPF2G120BF07AS More Information

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

SiC Diodes and IGBT Power Integrated Modules: ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.

FPF2G120BF07AS 3-Channel Boost Module: ON Semiconductor FPF2G120BF07AS 3-Channel Boost Module provides an optimized solution for the multi-string solar application. The integrated high speed field stop IGBTs and SiC diodes provide lower conduction and switching losses. And, the screw clamp provides a fast and reliable mounting method.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
FPF2G120BF07AS DISTI # V99:2348_14141233	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray	70	100:$93.6600 25:$98.4599 10:$101.4599 5:$104.1600 1:$105.2000
FPF2G120BF07ASP DISTI # V99:2348_14141234	ON Semiconductor	HPM(HIGH POWER MODULE)	70	25:$102.0699 10:$105.1900 5:$108.7000 1:$109.0800
FPF2G120BF07ASP DISTI # FPF2G120BF07ASP-ND	ON Semiconductor	IC LOAD SWITCH RoHS: Compliant Min Qty: 1 Container: Tray	70In Stock	10:$103.6350 1:$109.2800
FPF2G120BF07AS DISTI # FPF2G120BF07AS-ND	ON Semiconductor	IC LOAD SWITCH RoHS: Compliant Min Qty: 1 Container: Tray	65In Stock	10:$99.9600 1:$105.4000
FPF2G120BF07AS DISTI # 25887478	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray	70	1:$105.2000
FPF2G120BF07ASP DISTI # 31085825	ON Semiconductor	HPM(HIGH POWER MODULE)	70	1:$109.0800
FPF2G120BF07AS DISTI # FPF2G120BF07AS	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07AS) RoHS: Compliant Min Qty: 1 Container: Case	Europe - 0	1000:€78.7900 500:€79.2900 100:€79.8900 50:€80.3900 25:€80.9900 10:€81.4900 1:€82.0900
FPF2G120BF07AS DISTI # FPF2G120BF07AS	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Bulk (Alt: FPF2G120BF07AS) Min Qty: 4 Container: Bulk	Americas - 0	40:$93.1900 20:$95.5900 12:$96.7900 8:$98.0900 4:$98.6900
FPF2G120BF07AS DISTI # FPF2G120BF07AS	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07AS) RoHS: Compliant Min Qty: 70 Container: Tray	Americas - 0	700:$81.8900 420:$83.8900 280:$85.9900 140:$88.2900 70:$89.3900
FPF2G120BF07ASP DISTI # FPF2G120BF07ASP	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP) RoHS: Compliant Min Qty: 70 Container: Tray	Americas - 0	700:$84.8900 420:$86.9900 280:$89.1900 140:$91.4900 70:$92.6900
FPF2G120BF07ASP DISTI # FPF2G120BF07ASP	ON Semiconductor	Trans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP) RoHS: Compliant Min Qty: 1 Container: Case	Europe - 0	1000:€81.6900 500:€82.1900 100:€82.7900 50:€83.3900 25:€83.8900 10:€84.4900 1:€85.0900
FPF2G120BF07AS DISTI # 512-FPF2G120BF07AS	ON Semiconductor	IGBT Modules High Power Module RoHS: Compliant	11	1:$108.8000 5:$106.8100 10:$102.0000
FPF2G120BF07ASP DISTI # 512-FPF2G120BF07ASP	ON Semiconductor	IGBT Modules High Power Module RoHS: Compliant	70	1:$112.8000 5:$110.7300 10:$105.7500 25:$102.2200
FPF2G120BF07AS	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor RoHS: Compliant	140	1000:$99.4200 500:$104.6500 100:$108.9600 25:$113.6200 1:$122.3600

Related products

Image	Part #	Description
	Mfr.#: FPF2G120BF07ASP OMO.#: OMO-FPF2G120BF07ASP	IGBT Modules High Power Module
	Mfr.#: FPF2G120BF07AS OMO.#: OMO-FPF2G120BF07AS	IGBT Modules High Power Module
	Mfr.#: FPF2G120BF07AS OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR	IC LOAD SWITCH
	Mfr.#: FPF2G120BF07ASP OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR	IC LOAD SWITCH

Availability

Stock:: 11
On Order:: 1994
Enter Quantity:

Current price of FPF2G120BF07AS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$108.80~~; ~~$108.80~~

5: ~~$106.81~~; ~~$534.05~~

10: ~~$102.00~~; ~~$1 020.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FPF2G120BF07AS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes