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IPP220N25NFDAKSA1

IPP220N25NFDAKSA1
Mfr. #:
IPP220N25NFDAKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 250V 61A TO220-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP220N25NFDAKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP220N25NFDAKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
250 V
Id - Continuous Drain Current:
61 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
86 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS Fast Diode
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
60 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPP220N25NFD SP001108126
Unit Weight:
0.211644 oz
Tags
IPP220, IPP22, IPP2, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 Infineon IPP220N25NFDAKSA1
***p One Stop Japan
Trans MOSFET N-CH 250V 61A 3-Pin(3+Tab) TO-220 Tube
***ical
Trans MOSFET N-CH 250V 61A 3-Pin(3+Tab) TO-220
***et Europe
Trans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube
***et
MOSFET N-Ch 250V 61A TO220-3
***i-Key
MOSFET N-CH 250V 61A TO220
***ronik
N-CH 250V 61A 22.0mOHM TO220
***ark
Mosfet, N-Ch, 250V, 61A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS FD Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 250V, 61A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:61A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.019ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS FD Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
OptiMOS™ Fast Diode (FD) Power MOSFETs
Infineon OptiMOS™ Fast Diode (FD) devices are Infineon's latest generation N-channel power MOSFETs in 200V and 250V options. These Infineon OptiMOS FD devices feature reduced Qrr, very low on-resistance, and 175ºC operating temperature. These Infineon OptiMOS FD MOSFETs are optimized for body diode hard commutation and ideal for applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC/AC inverter.Learn More
Part # Mfg. Description Stock Price
IPP220N25NFDAKSA1
DISTI # V36:1790_06377486		Infineon Technologies AGTrans MOSFET N-CH 250V 61A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 500000:$2.8390
  • 250000:$2.8430
  • 50000:$3.2730
  • 5000:$4.0980
  • 500:$4.2400
IPP220N25NFDAKSA1
DISTI # V99:2348_06377486		Infineon Technologies AGTrans MOSFET N-CH 250V 61A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 500000:$3.0520
  • 250000:$3.0560
  • 50000:$3.4250
  • 5000:$4.1210
  • 500:$4.2400
IPP220N25NFDAKSA1
DISTI # IPP220N25NFDAKSA1-ND		Infineon Technologies AGMOSFET N-CH 250V 61A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$3.4040
  • 500:$4.2486
  • 100:$4.9908
  • 25:$5.7584
  • 10:$6.0910
  • 1:$6.7800
IPP220N25NFDAKSA1
DISTI # IPP220N25NFDAKSA1		Infineon Technologies AGTrans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube - Bulk (Alt: IPP220N25NFDAKSA1)
RoHS: Compliant
Min Qty: 132
Container: Bulk		Americas - 0
  • 660:$2.3900
  • 1320:$2.3900
  • 396:$2.4900
  • 264:$2.5900
  • 132:$2.6900
IPP220N25NFDAKSA1
DISTI # IPP220N25NFDAKSA1		Infineon Technologies AGTrans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP220N25NFDAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.3900
  • 3000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
  • 500:$2.7900
IPP220N25NFDAKSA1
DISTI # SP001108126		Infineon Technologies AGTrans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube (Alt: SP001108126)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.2900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.7900
  • 1:€3.0900
IPP220N25NFDAKSA1
DISTI # 12AC9728		Infineon Technologies AGMOSFET, N-CH, 250V, 61A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes0
  • 500:$4.0800
  • 250:$4.5600
  • 100:$4.8000
  • 50:$5.0400
  • 25:$5.2900
  • 10:$5.5300
  • 1:$6.5100
IPP220N25NFDAKSA1
DISTI # 726-IPP220N25NFDAKS1		Infineon Technologies AGMOSFET N-Ch 250V 61A TO220-3
RoHS: Compliant		5
  • 1:$6.4500
  • 10:$5.4800
  • 100:$4.7500
  • 250:$4.5100
  • 500:$4.0400
  • 1000:$3.4100
IPP220N25NFD
DISTI # 726-IPP220N25NFD		Infineon Technologies AGMOSFET N-Ch 250V 61A TO220-3
RoHS: Compliant		0
  • 1:$6.4500
  • 10:$5.4800
  • 100:$4.7500
  • 250:$4.5100
  • 500:$4.0400
IPP220N25NFDAKSA1Infineon Technologies AGPower Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6
  • 1000:$2.5000
  • 500:$2.6300
  • 100:$2.7400
  • 25:$2.8600
  • 1:$3.0800
IPP220N25NFDAKSA1
DISTI # 2709869		Infineon Technologies AGMOSFET, N-CH, 250V, 61A, TO-220
RoHS: Compliant		0
  • 500:$6.4100
  • 100:$7.5300
  • 25:$8.6800
  • 10:$9.1800
  • 1:$10.2200
IPP220N25NFDAKSA1
DISTI # 2709869		Infineon Technologies AGMOSFET, N-CH, 250V, 61A, TO-2200
  • 500:£3.1400
  • 250:£3.5000
  • 100:£3.7100
  • 10:£4.2700
  • 1:£5.5200
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Availability
Stock:
Available
On Order:
1991
Enter Quantity:
Current price of IPP220N25NFDAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.45
$6.45
10
$5.48
$54.80
100
$4.75
$475.00
250
$4.51
$1 127.50
500
$4.04
$2 020.00
1000
$3.41
$3 410.00
2500
$3.24
$8 100.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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