SIRC06DP-T1-GE3

Mfr. #:: SIRC06DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIRC06DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIRC06DP-T1-GE3 Datasheet SIRC06DP-T1-GE3 Datasheet (P4-P6)SIRC06DP-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIRC06DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 60 A

Rds On - Drain-Source Resistance:: 4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 4.5 V

Qg - Gate Charge:: 38.5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 50 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIR

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 12 ns

Tags: SIRC0, SIRC, SIR

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRC06DP-T1-GE3 More Information

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Market price

Part #	Mfg.	Description	Stock	Price
SIRC06DP-T1-GE3 DISTI # SIRC06DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	6000:$0.3742 3000:$0.3929
SIRC06DP-T1-GE3 DISTI # SIRC06DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6000In Stock	1000:$0.4336 500:$0.5493 100:$0.6649 10:$0.8530 1:$0.9500
SIRC06DP-T1-GE3 DISTI # SIRC06DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6000In Stock	1000:$0.4336 500:$0.5493 100:$0.6649 10:$0.8530 1:$0.9500
SIRC06DP-T1-GE3 DISTI # 59AC7427	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT	0	10000:$0.3400 6000:$0.3480 4000:$0.3610 2000:$0.4010 1000:$0.4410 1:$0.4600
SIRC06DP-T1-GE3 DISTI # 81AC2786	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, 150DEG C, 50W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes	6050	500:$0.5130 250:$0.5550 100:$0.5970 50:$0.6570 25:$0.7170 10:$0.7780 1:$0.9390
SIRC06DP-T1-GE3 DISTI # 78-SIRC06DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	5990	1:$0.9300 10:$0.7700 100:$0.5910 500:$0.5080 1000:$0.4010 3000:$0.3750 6000:$0.3560 9000:$0.3430 24000:$0.3320
SIRC06DP-T1-GE3 DISTI # 1783691	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTK, RL	6000	3000:£0.2800
SIRC06DP-T1-GE3 DISTI # 2932951	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, 150DEG C, 50W RoHS: Compliant	6050	1000:$2.5100 500:$2.6500 250:$2.8100 100:$3.0600 10:$3.5300 1:$4.0500
SIRC06DP-T1-GE3 DISTI # 2932951	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, 150DEG C, 50W	6050	500:£0.3730 250:£0.4030 100:£0.4320 25:£0.5670 5:£0.6320

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of SIRC06DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.93~~; ~~$0.93~~

10: ~~$0.77~~; ~~$7.70~~

100: ~~$0.59~~; ~~$59.10~~

500: ~~$0.51~~; ~~$254.00~~

1000: ~~$0.40~~; ~~$401.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes