PartNumber | SIRC06DP-T1-GE3 | SIRC04DP-T1-GE3 | SIRC10DP-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 60 A | 60 A | 60 A |
Rds On Drain Source Resistance | 4 mOhms | 3.5 mOhms | 3.5 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 2.1 V | 2.4 V |
Vgs Gate Source Voltage | 4.5 V | - 16 V, 20 V | 20 V, - 16 V |
Qg Gate Charge | 38.5 nC | 16.6 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 50 W | 50 W | 43 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | SIR |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 8 ns | 9 ns | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 55 ns | 30 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 23 ns | 25 ns | 15 ns |
Typical Turn On Delay Time | 12 ns | 30 ns | 10 ns |
Forward Transconductance Min | - | 140 S | - |
Unit Weight | - | - | 0.017870 oz |