SIRC18DP-T1-GE3

Mfr. #:: SIRC18DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIRC18DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIRC18DP-T1-GE3 Datasheet SIRC18DP-T1-GE3 Datasheet (P4-P6)SIRC18DP-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIRC18DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 60 A

Rds On - Drain-Source Resistance:: 850 uOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: - 16 V, 20 V

Qg - Gate Charge:: 111 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 54.3 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIR

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 70 S

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 21 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 30 ns

Typical Turn-On Delay Time:: 16 ns

Tags: SIRC1, SIRC, SIR

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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SIRC18DP-T1-GE3 Description

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R

***ical: Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R

***i-Key: MOSFET N-CH 30V 60A POWERPAKSO-8

***ark: MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:54.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 30V, 60A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):850µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:54.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIRC18DP-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SIRC18DP-T1-GE3 DISTI # V72:2272_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	75000:$0.5302 30000:$0.5332 15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 10:$1.1112 1:$1.4801
SIRC18DP-T1-GE3 DISTI # V99:2348_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	0	6000000:$0.5738 3000000:$0.5739 600000:$0.5746 60000:$0.5754 6000:$0.5755
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.5262 6000:$0.5467 3000:$0.5755
SIRC18DP-T1-GE3 DISTI # 30209835	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 12:$1.1112
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC18DP-T1-GE3) Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5009 30000:$0.5149 18000:$0.5299 12000:$0.5519 6000:$0.5689
SIRC18DP-T1-GE3 DISTI # 59AC7428	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT	0	10000:$0.4980 6000:$0.5090 4000:$0.5290 2000:$0.5880 1000:$0.6460 1:$0.6740
SIRC18DP-T1-GE3 DISTI # 78-SIRC18DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	8359	1:$1.3600 10:$1.1200 100:$0.8650 500:$0.7430 1000:$0.5870 3000:$0.5480 6000:$0.5200 9000:$0.5010
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO RoHS: Compliant	48	1000:$0.9580 500:$1.2200 100:$1.4700 5:$1.8900
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO	48	500:£0.5680 250:£0.6150 100:£0.6610 10:£0.9100 1:£1.1900

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Availability

Stock:: Available
On Order:: 1991
Enter Quantity:

Current price of SIRC18DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.36~~; ~~$1.36~~

10: ~~$1.12~~; ~~$11.20~~

100: ~~$0.86~~; ~~$86.50~~

500: ~~$0.74~~; ~~$371.50~~

1000: ~~$0.59~~; ~~$587.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIRC18DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes