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SIHD6N65ET5-GE3

SIHD6N65ET5-GE3
Mfr. #:
SIHD6N65ET5-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds E Series DPAK TO-252
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD6N65ET5-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N65ET5-GE3 DatasheetSIHD6N65ET5-GE3 Datasheet (P4-P6)SIHD6N65ET5-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHD6N65ET5-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
500 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.011993 oz
Tags
SIHD6N65ET, SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 650V 7A 3-Pin DPAK
***or
MOSFET N-CH 650V 7A TO252AA
*** Europe
N-CH SINGLE 650V TO252
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD6N65ET5-GE3
DISTI # SIHD6N65ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A TO252AA
RoHS: Not compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.7371
SIHD6N65ET5-GE3
DISTI # SIHD6N65ET5-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 650V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N65ET5-GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.6659
  • 12000:$0.6849
  • 8000:$0.7039
  • 4000:$0.7339
  • 2000:$0.7559
SIHD6N65ET5-GE3
DISTI # 78-SIHD6N65ET5-GE3		Vishay IntertechnologiesMOSFET 650V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 2000:$0.7030
  • 4000:$0.6770
  • 10000:$0.6500
Image Part # Description
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OMO.#: OMO-SIHD6N62E-GE3

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Mfr.#: SIHD6N65ET4-GE3

OMO.#: OMO-SIHD6N65ET4-GE3

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Mfr.#: SIHD6N65E-GE3

OMO.#: OMO-SIHD6N65E-GE3-VISHAY

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SIHD6N62E-GE3-CUT TAPE

Mfr.#: SIHD6N62E-GE3-CUT TAPE

OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

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Mfr.#: SIHD6N62E

OMO.#: OMO-SIHD6N62E-1190

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OMO.#: OMO-SIHD6N65E-1190

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Mfr.#: SIHD6N65EGE3

OMO.#: OMO-SIHD6N65EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD6N62ET1-GE3

Mfr.#: SIHD6N62ET1-GE3

OMO.#: OMO-SIHD6N62ET1-GE3-VISHAY

 MOSFET N-CH 620V 6A TO252AA
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of SIHD6N65ET5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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