PartNumber | SIHD6N65E-GE3 | SIHD6N62E-GE3 | SIHD6N65ET1-GE3 |
Description | MOSFET 650V Vds 30V Vgs DPAK (TO-252) | MOSFET 620V Vds 30V Vgs DPAK (TO-252) | MOSFET 650V Vds E Series DPAK TO-252 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 620 V | 650 V |
Id Continuous Drain Current | 7 A | 6 A | 7 A |
Rds On Drain Source Resistance | 600 mOhms | 900 mOhms | 500 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 24 nC | 17 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 78 W | 78 W | 78 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Bulk | Bulk | Reel |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | E | E | E |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 20 ns | 16 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 10 ns | 12 ns |
Factory Pack Quantity | 3000 | 3000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 22 ns | 30 ns |
Typical Turn On Delay Time | 14 ns | 12 ns | 14 ns |
Unit Weight | 0.050717 oz | 0.050717 oz | 0.011993 oz |