SIHD6N65E-GE3

SIHD6N65E-GE3
Mfr. #:
SIHD6N65E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD6N65E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N65E-GE3 DatasheetSIHD6N65E-GE3 Datasheet (P4-P6)SIHD6N65E-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHD6N65E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Bulk
Height:
2.38 mm
Length:
6.73 mm
Series:
E
Width:
6.22 mm
Brand:
Vishay / Siliconix
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.050717 oz
Tags
SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin TO-252
***i-Key
MOSFET N-CH 650V 7A TO252
***ark
N-CHANNEL 650V
***nell
MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD6N65E-GE3
DISTI # V99:2348_09218426
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant
1342
  • 3000:$0.6794
  • 1000:$0.7977
  • 500:$0.8813
  • 100:$1.0153
  • 10:$1.3180
  • 1:$1.7552
SIHD6N65E-GE3
DISTI # V36:1790_09218426
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant
0
  • 3000000:$0.7090
  • 1500000:$0.7113
  • 300000:$0.8899
  • 30000:$1.1900
  • 3000:$1.2400
SIHD6N65E-GE3
DISTI # SIHD6N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 7A TO252
Min Qty: 1
Container: Tube
On Order
  • 5000:$0.6916
  • 2500:$0.7020
  • 500:$0.9100
  • 100:$1.1076
  • 25:$1.3000
  • 10:$1.3780
  • 1:$1.5300
SIHD6N65E-GE3
DISTI # 25872616
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant
1342
  • 3000:$0.6794
  • 1000:$0.7977
  • 500:$0.8813
  • 100:$1.0153
  • 10:$1.3180
  • 9:$1.7552
SIHD6N65E-GE3
DISTI # SIHD6N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD6N65E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6659
  • 18000:$0.6849
  • 12000:$0.7039
  • 6000:$0.7339
  • 3000:$0.7559
SIHD6N65E-GE3
DISTI # 19X1933
Vishay IntertechnologiesMOSFET Transistor, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
RoHS: Compliant
3690
  • 500:$0.9110
  • 100:$1.0400
  • 50:$1.1400
  • 25:$1.2400
  • 10:$1.3400
  • 1:$1.6100
SIHD6N65E-GE3
DISTI # 78-SIHD6N65E-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
1
  • 1:$1.6400
  • 10:$1.3000
  • 100:$1.0300
  • 500:$0.9110
  • 1000:$0.8840
  • 3000:$0.7430
SIHD6N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant
Europe - 3000
    SIHD6N65E-GE3
    DISTI # 2364075
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-252
    RoHS: Compliant
    3800
    • 100:£0.9910
    • 10:£1.3400
    • 1:£1.7500
    SIHD6N65E-GE3
    DISTI # 2364075
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-252
    RoHS: Compliant
    3690
    • 25:$2.0500
    • 10:$2.1700
    • 1:$2.4100
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    Availability
    Stock:
    Available
    On Order:
    1000
    Enter Quantity:
    Current price of SIHD6N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.61
    $1.61
    10
    $1.34
    $13.40
    100
    $1.04
    $104.00
    500
    $0.91
    $455.50
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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