SIHD6N65ET1-GE3

Mfr. #:: SIHD6N65ET1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 650V Vds E Series DPAK TO-252
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD6N65ET1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHD6N65ET1-GE3 Datasheet SIHD6N65ET1-GE3 Datasheet (P4-P6)SIHD6N65ET1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SIHD6N65ET1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 7 A

Rds On - Drain-Source Resistance:: 500 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 24 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 78 W

Configuration:: Single

Packaging:: Reel

Series:: E

Brand:: Vishay / Siliconix

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 30 ns

Typical Turn-On Delay Time:: 14 ns

Unit Weight:: 0.011993 oz

Tags: SIHD6N65ET, SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD6N65ET1-GE3 Description

***et: Power MOSFET N-Channel 650V 7A 3-Pin DPAK T/R

***i-Key: MOSFET N-CH 650V 7A TO252AA

*** Europe: N-CH SINGLE 650V TO252

***ark: N-Channel 650V

SIHD6N65ET1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD6N65ET1-GE3 DISTI # SIHD6N65ET1-GE3-ND	Vishay Siliconix	MOSFET N-CH 650V 7A TO252AA RoHS: Not compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.7371
SIHD6N65ET1-GE3 DISTI # SIHD6N65ET1-GE3	Vishay Intertechnologies	Power MOSFET N-Channel 650V 7A 3-Pin DPAK T/R - Tape and Reel (Alt: SIHD6N65ET1-GE3) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.6659 12000:$0.6849 8000:$0.7039 4000:$0.7339 2000:$0.7559
SIHD6N65ET1-GE3 DISTI # 78-SIHD6N65ET1-GE3	Vishay Intertechnologies	MOSFET 650V Vds E Series DPAK TO-252 RoHS: Compliant	0	2000:$0.7030 4000:$0.6770 10000:$0.6500

Related products

Image	Part #	Description
	Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3	MOSFET 650V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3	MOSFET 620V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3	MOSFET 650V Vds E Series DPAK TO-252
	Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3-VISHAY	RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3-VISHAY	RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
	Mfr.#: SIHD6N62E-GE3-CUT TAPE OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SIHD6N62E OMO.#: OMO-SIHD6N62E-1190	New and Original
	Mfr.#: SIHD6N65EGE3 OMO.#: OMO-SIHD6N65EGE3-1190	Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	Mfr.#: SIHD6N65ET4-GE3 OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY	MOSFET N-CH 650V 7A TO252AA
	Mfr.#: SIHD6N65ET5-GE3 OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY	MOSFET N-CH 650V 7A TO252AA

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SIHD6N65ET1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Start with

SIHD6N65ET 3
SIHD6N65 6
SIHD6N6 10
SIHD6 11
SIHD 46
SIH 797

Newest Products

Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Compare SIHD6N65ET1-GE3

SIHD6N65ET1GE3 vs SIHD6N65ET4GE3 vs SIHD6N65ET5GE3
Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
50 A VRPower® Solution (DrMOS)

Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SIHD6N65ET1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes