FQA170N06

FQA170N06
Mfr. #:
FQA170N06
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 60V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQA170N06 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
170 A
Rds On - Drain-Source Resistance:
5.6 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
20.1 mm
Length:
16.2 mm
Series:
FQA170N06
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
85 S
Fall Time:
430 ns
Product Type:
MOSFET
Rise Time:
700 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
260 ns
Typical Turn-On Delay Time:
85 ns
Part # Aliases:
FQA170N06_NL
Unit Weight:
0.225789 oz
Tags
FQA17, FQA1, FQA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
FQA170N06
DISTI # 33644134
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3PN Rail1028
  • 4:$2.7994
FQA170N06
DISTI # FQA170N06-ND
ON SemiconductorMOSFET N-CH 60V 170A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
356In Stock
  • 2700:$3.3847
  • 900:$4.2245
  • 450:$4.7080
  • 25:$5.7260
  • 10:$6.0570
  • 1:$6.7400
FQA170N06
DISTI # V36:1790_06359808
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3PN Rail0
  • 450000:$2.4550
  • 225000:$2.4610
  • 45000:$3.4390
  • 4500:$5.5620
  • 450:$5.9400
FQA170N06
DISTI # FQA170N06
ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA170N06)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$5.3900
  • 2700:$5.4900
  • 1800:$5.5900
  • 450:$5.6900
  • 900:$5.6900
FQA170N06
DISTI # 58K8865
ON SemiconductorN CHANNEL MOSFET, 60V, 170A, TO-3PN,Transistor Polarity:N Channel,Continuous Drain Current Id:170A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 5000:$3.7000
  • 2500:$4.0100
  • 1000:$4.1800
  • 500:$4.9400
  • 250:$5.4600
  • 100:$5.8900
  • 10:$7.2600
  • 1:$8.5000
FQA170N06
DISTI # 512-FQA170N06
ON SemiconductorMOSFET 60V N-Channel QFET
RoHS: Compliant
77
  • 1:$6.4100
  • 10:$5.4500
  • 100:$4.7200
  • 250:$4.4800
  • 500:$4.0200
  • 1000:$3.3900
FQA170N06
DISTI # 6714904P
ON SemiconductorMOSFET N-CHANNEL 60V 170A TO-3P(N), TU464
  • 10:£4.7600
FQA170N06
DISTI # XSKDRABV0037739
ON SEMICONDUCTOR 
RoHS: Compliant
360 in Stock0 on Order
  • 360:$3.9300
  • 119:$4.2100
FQA170N06
DISTI # 9845976
ON SemiconductorMOSFET, N, TO-3P0
  • 500:£3.1000
  • 250:£3.4500
  • 100:£3.6400
  • 10:£4.2000
  • 1:£5.4300
FQA170N06
DISTI # 9845976
ON SemiconductorMOSFET, N, TO-3P
RoHS: Compliant
0
  • 2500:$4.9500
  • 1000:$5.2200
  • 500:$6.1900
  • 250:$6.8900
  • 100:$7.2600
  • 10:$8.3800
  • 1:$9.8600
Image Part # Description
860160672011

Mfr.#: 860160672011

OMO.#: OMO-860160672011-WURTH-ELECTRONICS

AL ELECTROLYTIC CAPACITORS 22UF 50V, PK
Availability
Stock:
77
On Order:
2060
Enter Quantity:
Current price of FQA170N06 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.41
$6.41
10
$5.45
$54.50
100
$4.72
$472.00
250
$4.48
$1 120.00
500
$4.02
$2 010.00
1000
$3.39
$3 390.00
2500
$3.22
$8 050.00
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