BUZ73ALHXKSA1

BUZ73ALHXKSA1
Mfr. #:
BUZ73ALHXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 5.5A TO220-3
Lifecycle:
New from this manufacturer.
Datasheet:
BUZ73ALHXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
BUZ73ALH, BUZ73AL, BUZ73A, BUZ73, BUZ7, BUZ
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-220 Tube
***nsix Microsemi
5.5A I(D) 200V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 200V 5.5A TO220-3
*** Electronics
N-CHANNEL POWER MOSFET
***i-Key
MOSFET N-CH 200V 5A TO-220F
***ser
MOSFETs 200V N-Ch QFET Logic Level
***el Electronic
IC AMP CLASS D MONO 700MW 9VCSP
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MOSFET N-CH 250V 6.7A TO-220F
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***ser
MOSFETs & MOSFETs RF .
***el Nordic
Contact for details
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,6.3A I(D),to-220Ab Rohs Compliant: Yes
***ure Electronics
N-Channel 200 V 400 mO 25 nC Flange Mount QFET Mosfet - TO-220F
***Yang
Trans MOSFET N-CH 200V 6.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***emi
N-Channel QFET® MOSFET 200V, 6.3A, 400mΩ
***r Electronics
Power Field-Effect Transistor, 6.3A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -5.2 A, 690 mΩ, TO-220F
***Yang
Trans MOSFET P-CH 200V 5.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***i-Key
MOSFET N-CH 200V 6.8A TO-220F
***el Electronic
IC OPAMP GP 1 CIRCUIT 5SSOP
***ark
MOSFET, N, TO-220F; Transistor type:MOSFET; Current, Id cont:6.8A; Resistance, Rds on:0.36R; Case style:TO-220F; Current, Idm pulse:27.2A; Pins, No. of:3; Power dissipation:40W; Power, Pd:40W; Transistor polarity:N; Voltage, Vds RoHS Compliant: Yes
***i-Key
MOSFET N-CH 200V 4.8A TO-220F
***Yang
200V N-Channel MOSFET - Bulk
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
Part # Mfg. Description Stock Price
BUZ73ALHXKSA1
DISTI # BUZ73ALHXKSA1-ND
Infineon Technologies AGMOSFET N-CH 200V 5.5A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    BUZ73ALHXKSA1
    DISTI # BUZ73ALHXKSA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 5.5A 3-Pin TO-220 Tube - Bulk (Alt: BUZ73ALHXKSA1)
    RoHS: Compliant
    Min Qty: 863
    Container: Bulk
    Americas - 0
    • 8630:$0.3679
    • 4315:$0.3749
    • 2589:$0.3879
    • 1726:$0.4019
    • 863:$0.4169
    BUZ73AL H
    DISTI # 726-BUZ73ALH
    Infineon Technologies AGMOSFET N-Ch 200V 5.5A TO220-3
    RoHS: Compliant
    0
      BUZ73ALHXKSA1Infineon Technologies AGPower Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      5866
      • 1000:$0.3800
      • 500:$0.4000
      • 100:$0.4200
      • 25:$0.4400
      • 1:$0.4700
      Image Part # Description
      BUZ73A

      Mfr.#: BUZ73A

      OMO.#: OMO-BUZ73A

      MOSFET N-Ch 200V 5.5A TO220-3
      BUZ73A SMD

      Mfr.#: BUZ73A SMD

      OMO.#: OMO-BUZ73A-SMD-1190

      New and Original
      BUZ73AE3046XK

      Mfr.#: BUZ73AE3046XK

      OMO.#: OMO-BUZ73AE3046XK-INFINEON-TECHNOLOGIES

      MOSFET N-CH 200V 5.5A TO-220
      BUZ73AH

      Mfr.#: BUZ73AH

      OMO.#: OMO-BUZ73AH-1190

      New and Original
      BUZ73AHXKSA1

      Mfr.#: BUZ73AHXKSA1

      OMO.#: OMO-BUZ73AHXKSA1-1190

      - Bulk (Alt: BUZ73AHXKSA1)
      BUZ73AIN

      Mfr.#: BUZ73AIN

      OMO.#: OMO-BUZ73AIN-1190

      - Bulk (Alt: BUZ73AIN)
      BUZ73AL

      Mfr.#: BUZ73AL

      OMO.#: OMO-BUZ73AL-INFINEON-TECHNOLOGIES

      MOSFET N-CH 200V 5.5A TO-220AB
      BUZ73AL H

      Mfr.#: BUZ73AL H

      OMO.#: OMO-BUZ73AL-H-1190

      MOSFET N-Ch 200V 5.5A TO220-3
      BUZ73ALH

      Mfr.#: BUZ73ALH

      OMO.#: OMO-BUZ73ALH-1190

      New and Original
      BUZ73ALIN

      Mfr.#: BUZ73ALIN

      OMO.#: OMO-BUZ73ALIN-1190

      - Bulk (Alt: BUZ73ALIN)
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of BUZ73ALHXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.55
      $0.55
      10
      $0.52
      $5.24
      100
      $0.50
      $49.67
      500
      $0.47
      $234.55
      1000
      $0.44
      $441.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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