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IPB600N25N3 G

IPB600N25N3 G
Mfr. #:
IPB600N25N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB600N25N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB600N25N3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
250 V
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
51 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
29 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
136 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
24 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPB600N25N3GATMA1 IPB6N25N3GXT SP000676408
Unit Weight:
0.139332 oz
Tags
IPB600N25, IPB600, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB600N25N3GATMA1
DISTI # V72:2272_06383169		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		61
  • 25:$2.0310
  • 10:$2.2560
  • 1:$2.9139
IPB600N25N3GATMA1
DISTI # V36:1790_06383169		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.0580
  • 500000:$1.0590
  • 100000:$1.1490
  • 10000:$1.2860
  • 1000:$1.3080
IPB600N25N3GATMA1
DISTI # IPB600N25N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		763In Stock
  • 500:$1.7183
  • 100:$2.0914
  • 10:$2.6020
  • 1:$2.9000
IPB600N25N3GATMA1
DISTI # IPB600N25N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		763In Stock
  • 500:$1.7183
  • 100:$2.0914
  • 10:$2.6020
  • 1:$2.9000
IPB600N25N3GATMA1
DISTI # IPB600N25N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.2393
  • 2000:$1.2870
  • 1000:$1.3823
IPB600N25N3GATMA1
DISTI # 33111532		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.1144
IPB600N25N3G
DISTI # 31073245		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
RoHS: Compliant		279
  • 10:$2.6875
IPB600N25N3GATMA1
DISTI # 26977400		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		61
  • 5:$2.9139
IPB600N25N3GATMA1
DISTI # IPB600N25N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB600N25N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 4000
  • 10000:$1.1536
  • 6000:$1.1745
  • 4000:$1.2154
  • 2000:$1.2610
  • 1000:$1.3082
IPB600N25N3 G
DISTI # IPB600N25N3 G		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$1.1492
  • 25000:$1.1640
  • 10000:$1.1791
  • 5000:$1.1946
  • 3000:$1.2269
  • 2000:$1.2610
  • 1000:$1.2970
IPB600N25N3GATMA1
DISTI # SP000676408		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263 (Alt: SP000676408)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.9869
  • 6000:€1.0579
  • 4000:€1.1389
  • 2000:€1.2339
  • 1000:€1.4809
IPB600N25N3GATMA1.
DISTI # 27AC6721		Infineon Technologies AGDIFFERENTIATED MOSFETS ROHS COMPLIANT: YES0
  • 10000:$1.1600
  • 6000:$1.1800
  • 4000:$1.2200
  • 2000:$1.2600
  • 1:$1.3100
IPB600N25N3GATMA1
DISTI # 85X6023		Infineon Technologies AGMOSFET Transistor, N Channel, 25 A, 250 V, 0.051 ohm, 10 V, 3 V RoHS Compliant: Yes1109
  • 500:$1.6000
  • 250:$1.7100
  • 100:$1.8300
  • 50:$1.9800
  • 25:$2.1400
  • 10:$2.2900
  • 1:$2.7000
IPB600N25N3 G
DISTI # 726-IPB600N25N3GXT		Infineon Technologies AGMOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
RoHS: Compliant		1050
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
  • 2000:$1.2200
  • 5000:$1.1800
IPB600N25N3GATMA1
DISTI # 726-IPB600N25N3GATMA		Infineon Technologies AGMOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
RoHS: Compliant		878
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
  • 2000:$1.2200
  • 5000:$1.1800
IPB600N25N3GATMA1
DISTI # 8269204P		Infineon Technologies AGMOSFET N-CH 25A 250V OPTIMOS3 TO263, RL1480
  • 500:£1.0870
  • 250:£1.1930
  • 50:£1.3580
IPB600N25N3GATMA1
DISTI # 2443388		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TO-263-3
RoHS: Compliant		1209
  • 2000:$1.8400
  • 1000:$1.9700
  • 500:$2.3800
  • 100:$2.7300
  • 10:$3.4200
  • 1:$4.0200
IPB600N25N3GATMA1
DISTI # 2443388RL		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TO-263-3
RoHS: Compliant		0
  • 2000:$1.8400
  • 1000:$1.9700
  • 500:$2.3800
  • 100:$2.7300
  • 10:$3.4200
  • 1:$4.0200
IPB600N25N3GATMA1
DISTI # 2443388		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TO-263-31662
  • 500:£1.2200
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.7500
  • 1:£2.3300
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of IPB600N25N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.67
$2.67
10
$2.27
$22.70
100
$1.81
$181.00
500
$1.58
$790.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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