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FDU6N50TU

FDU6N50TU
Mfr. #:
FDU6N50TU
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 500V N-Channel MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDU6N50TU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
900 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FDU6N50
Transistor Type:
1 N-Channel
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
55 ns
Factory Pack Quantity:
5040
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
6 ns
Unit Weight:
0.012102 oz
Tags
FDU6N5, FDU6N, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Electronics
STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 400V 4.5A IPAK
***ser
MOSFETs 400V N-Channel Adv Q-FET C-Series
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***el Electronic
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***emi
Power MOSFET 600V 6.8A 745 mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 6.6A 3-Pin(2+Tab) DPAK Tube
***ark
TUBE / NFET DPAK 600V 6.8A 745
***nell
NDD60N745U1-35G, SHIFT REGISTERS;
Part # Mfg. Description Stock Price
FDU6N50TU
DISTI # FDU6N50TU-ND		ON SemiconductorMOSFET N-CH 500V 6A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5265
FDU6N50TU
DISTI # FDU6N50TU		ON SemiconductorTrans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FDU6N50TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.3849
  • 10080:$0.3819
  • 20160:$0.3769
  • 30240:$0.3729
  • 50400:$0.3629
FDU6N50TU
DISTI # FDU6N50TU		ON SemiconductorTrans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FDU6N50TU)
RoHS: Compliant
Min Qty: 472
Container: Bulk		Americas - 0
  • 472:$0.4959
  • 474:$0.4929
  • 946:$0.4869
  • 2360:$0.4809
  • 4720:$0.4689
FDU6N50TU
DISTI # 86K1401		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,6A I(D),TO-251AA0
  • 10000:$0.4760
  • 2500:$0.4910
  • 1000:$0.6080
  • 500:$0.6960
  • 100:$0.7880
  • 10:$1.0300
  • 1:$1.2000
FDU6N50TU
DISTI # 512-FDU6N50TU		ON SemiconductorMOSFET 500V N-Channel MOSFET
RoHS: Compliant		4015
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7880
  • 500:$0.6960
  • 1000:$0.5500
  • 2500:$0.4880
  • 10000:$0.4690
FDU6N50TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		9586
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
Image Part # Description
TN4015H-6T

Mfr.#: TN4015H-6T

OMO.#: OMO-TN4015H-6T

 SCRs High Temperature 40A SCRs
TYN812RG

Mfr.#: TYN812RG

OMO.#: OMO-TYN812RG

 SCRs THYRISTOR
MCR12DG

Mfr.#: MCR12DG

OMO.#: OMO-MCR12DG

 SCRs 400V 12A
MJE181STU

Mfr.#: MJE181STU

OMO.#: OMO-MJE181STU

 Bipolar Transistors - BJT NPN Epitaxial Sil
BZX79C3V9

Mfr.#: BZX79C3V9

OMO.#: OMO-BZX79C3V9

 Zener Diodes 3.9V 0.5W Zener
1N5231CTR

Mfr.#: 1N5231CTR

OMO.#: OMO-1N5231CTR

 Zener Diodes 5.2V 0.5W Zener
STTH1210DI

Mfr.#: STTH1210DI

OMO.#: OMO-STTH1210DI

 Rectifiers Ultrafast recovery high voltage diode
IRLB4132PBF

Mfr.#: IRLB4132PBF

OMO.#: OMO-IRLB4132PBF

 MOSFET TRENCH_MOSFETS
0ADKP9100-RE

Mfr.#: 0ADKP9100-RE

OMO.#: OMO-0ADKP9100-RE

 Cartridge Fuses FUSE, CERAMIC TUBE 10A, 600VAC/500VDC
IRLB4132PBF

Mfr.#: IRLB4132PBF

OMO.#: OMO-IRLB4132PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 78A TO220
Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of FDU6N50TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.11
$1.11
10
$0.95
$9.49
100
$0.73
$72.80
500
$0.64
$322.00
1000
$0.51
$508.00
2500
$0.45
$1 125.00
10000
$0.43
$4 330.00
25000
$0.42
$10 500.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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