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STGW35NB60SD

STGW35NB60SD
Mfr. #:
STGW35NB60SD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 35A 600V
Lifecycle:
New from this manufacturer.
Datasheet:
STGW35NB60SD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGW35NB60SD DatasheetSTGW35NB60SD Datasheet (P4-P6)STGW35NB60SD Datasheet (P7-P9)STGW35NB60SD Datasheet (P10-P12)STGW35NB60SD Datasheet (P13)
ECAD Model:
More Information:
STGW35NB60SD more Information STGW35NB60SD Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Maximum Gate Emitter Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
STGW35NB60SD
Packaging:
Tube
Continuous Collector Current Ic Max:
70 A
Height:
20.15 mm
Length:
15.75 mm
Width:
5.15 mm
Brand:
STMicroelectronics
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Tradename:
PowerMESH
Unit Weight:
1.340411 oz
Tags
STGW35NB, STGW35N, STGW35, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
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***SIT Distribution GmbH
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***ser
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***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
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***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
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STGW45HF Series 600 V 45 A Ultra Fast IGBT Flange Mount - TO-247
***icroelectronics
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***nell
IGBT, SINGLE, 600V, 70A, TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HF Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***ource
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***nell
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Part # Mfg. Description Stock Price
STGW35NB60SD
DISTI # 497-16202-5-ND		STMicroelectronicsIGBT 600V 70A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$3.4860
  • 510:$4.0593
  • 120:$4.6988
  • 30:$5.3603
  • 1:$6.2400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 138
  • 1:€4.6900
  • 10:€3.9900
  • 25:€3.9900
  • 50:€3.9900
  • 100:€3.2900
  • 500:€2.8900
  • 1000:€2.4900
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.0900
  • 1200:$2.9900
  • 2400:$2.7900
  • 3600:$2.6900
  • 6000:$2.5900
STGW35NB60SD
DISTI # 511-STGW35NB60SD		STMicroelectronicsIGBT Transistors N Ch 35A 600V
RoHS: Compliant		0
  • 1:$5.5500
  • 10:$4.7200
  • 100:$4.0900
  • 250:$3.8800
  • 500:$3.4800
  • 1000:$2.9400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTransistor: IGBT,600V,35A,200W,TO247-348
  • 1:$4.9500
  • 3:$4.2600
  • 10:$3.4300
  • 30:$3.0800
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 2500:$4.4400
  • 1000:$4.6600
  • 500:$5.5300
  • 250:$6.1600
  • 100:$6.4900
  • 10:$7.4900
  • 1:$8.8000
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 100:£3.6800
  • 10:£4.2500
  • 1:£5.5400
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of STGW35NB60SD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.55
$5.55
10
$4.72
$47.20
100
$4.09
$409.00
250
$3.88
$970.00
500
$3.48
$1 740.00
1000
$2.94
$2 940.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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