IKD06N60RATMA1

Mfr. #:: IKD06N60RATMA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT w/ INTG DIODE 600V 12A
Lifecycle:: New from this manufacturer.
Datasheet:: IKD06N60RATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-252-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 12 A

Pd - Power Dissipation:: 100 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RC

Packaging:: Reel

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKD06N60R SP000964628

Tags: IKD06N60RA, IKD06N60R, IKD06N6, IKD06N, IKD06, IKD0, IKD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKD06N60RATMA1 Description

***ical: Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: IGBT+ DIODE,600V,4A,TO252; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W

***ineon: RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon

***ical: Trans IGBT Chip N-CH 600V 12A 77000mW 3-Pin(2+Tab) DPAK T/R

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***el Electronic: Multilayer Ceramic Capacitors MLCC - Leaded 0.015uF 100volts X7R LS=5mm +/-10%

***ineon: Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration

***ark: Igbt, Single, 600V, 12A, To-252Aa-3

***i-Key Marketplace: IRGR4045 - DISCRETE IGBT WITH AN

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***nell: IGBT, SINGLE, 600V, 12A, TO-252AA-3; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 77W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of

***ical: Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252

***nell: TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 11A 3-Pin(2+Tab) DPAK Tube

***nsix Microsemi: Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA

*** Electronic Components: IGBT Transistors 600V TRENCH IGBT ULTRAFAST

***ark: Tape And Reel / G6, 600V, 7A, Dpakcopak Trr

***ment14 APAC: IGBT, SINGLE, 600V, 11A, TO-252

***S: French Electronic Distributor since 1988

***nell: IGBT, SINGLE, 600V, 11A, TO-252; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins:

***ical: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 5 A high speed

***ure Electronics: H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252

***nell: IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***(Formerly Allied Electronics): 600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UPBF

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes

***nell: IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1

Market price

Part #	Mfg.	Description	Stock	Price
IKD06N60RATMA1 DISTI # V72:2272_06384472	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2480	75000:$0.5743 30000:$0.5803 15000:$0.5862 6000:$0.5921 3000:$0.5981 1000:$0.6042 500:$0.7722 250:$0.8037 100:$0.8930 50:$0.9328 25:$1.0364 10:$1.1516 1:$1.4820
IKD06N60RATMA1 DISTI # IKD06N60RATMA1CT-ND	Infineon Technologies AG	IGBT 600V 12A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2257In Stock	1000:$0.6763 500:$0.8567 100:$1.0370 10:$1.3300 1:$1.4900
IKD06N60RATMA1 DISTI # IKD06N60RATMA1DKR-ND	Infineon Technologies AG	IGBT 600V 12A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2257In Stock	1000:$0.6763 500:$0.8567 100:$1.0370 10:$1.3300 1:$1.4900
IKD06N60RATMA1 DISTI # IKD06N60RATMA1TR-ND	Infineon Technologies AG	IGBT 600V 12A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.5837 2500:$0.6128
IKD06N60RATMA1 DISTI # 26195465	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2480	11:$1.4820
IKD06N60RATMA1 DISTI # SP000964628	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000964628) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 200030	25000:€0.4669 15000:€0.5029 10000:€0.5449 5000:€0.5939 2500:€0.7259
IKD06N60RATMA1 DISTI # IKD06N60RATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD06N60RATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.5289 15000:$0.5389 10000:$0.5579 5000:$0.5789 2500:$0.5999
IKD06N60RATMA1 DISTI # 726-IKD06N60RATMA1	Infineon Technologies AG	IGBT Transistors IGBT w/ INTG DIODE 600V 12A RoHS: Compliant	2455	1:$1.3600 10:$1.1600 100:$0.8970 500:$0.7930 1000:$0.6260 2500:$0.5550 10000:$0.5340
IKD06N60RATMA1	Infineon Technologies AG	RoHS: Not Compliant	2500	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800

Image	Part #	Description
	Mfr.#: 1EDI60I12AF OMO.#: OMO-1EDI60I12AF	Gate Drivers DRIVER IC
	Mfr.#: 6ED003L06F2XUMA1 OMO.#: OMO-6ED003L06F2XUMA1	Gate Drivers DRIVER IC
	Mfr.#: IKD06N60RF OMO.#: OMO-IKD06N60RF	IGBT Transistors IGBT PRODUCTS TrenchStop
	Mfr.#: AUIRGR4045D OMO.#: OMO-AUIRGR4045D	IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
	Mfr.#: UMK105CG151KV-F OMO.#: OMO-UMK105CG151KV-F	Multilayer Ceramic Capacitors MLCC - SMD/SMT 150pF 50V C0G +/-10% 0402 Gen Purp
	Mfr.#: ATS143 OMO.#: OMO-ATS143	Crystals 14.31818MHz
	Mfr.#: AUIRGR4045D OMO.#: OMO-AUIRGR4045D-INFINEON-TECHNOLOGIES	IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
	Mfr.#: 1EDI60I12AF OMO.#: OMO-1EDI60I12AF-91	Gate Drivers DRIVER IC
	Mfr.#: UMK105CG151KV-F OMO.#: OMO-UMK105CG151KV-F-TAIYO-YUDEN	Multilayer Ceramic Capacitors MLCC - SMD/SMT Midhigh 0402 C0G 50V 150pF 10%
	Mfr.#: ATS143 OMO.#: OMO-ATS143-CTS-ELECTRONIC-COMPONENTS	Crystals 14.31818MHz

IKD06N60RATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes