BSB165N15NZ3GXUMA1

Mfr. #:: BSB165N15NZ3GXUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSB165N15NZ3GXUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: WDSON-2-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 45 A

Rds On - Drain-Source Resistance:: 13.1 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 35 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 78 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 24 S

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 17 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: BSB165N15NZ3 BSB165N15NZ3GXT G SP000617000

Tags: BSB165, BSB16, BSB1, BSB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSB165N15NZ3GXUMA1 Description

***ure Electronics: Single N-Channel 150 V 16.5 mOhm 26 nC OptiMOS Power Mosfet - MG-WDSON-2

***ment14 APAC: MOSFET, N-CH, 150V, 45A, WDSON-2; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:150V; On Resistance

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, MG-WDSON-2, RoHS

***nell: MOSFET, N-CH, 150V, 45A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0131ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 78W; Transistor Case Style: WDSON; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***emi: N-Channel Power Trench® MOSFET 150V, 9.4a, 134mΩ

***ure Electronics: FDMC86244 Series 150 V 9.4 A 134 mOhm N.Ch. PowerTrench Mosfet - MLP-8

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 150V, 9.4A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ure Electronics: N-Channel 150 V 177 mOhm 19 W ThunderFET Mosfet PowerPAK-SC-70-6L

***ical: Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R

***ark: MOSFET, N CH, 150V, 7.7A, POWERPAK SC70

***roFlash: Power Field-Effect Transistor, 7.7A I(D), 150V, 0.177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Stop Electro: Power Field-Effect Transistors

***enic: PowerPAK SC-70-6L MOSFETs ROHS

***emi: N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

***ure Electronics: FDS86240 Series 150 V 7.5 A 19.8 mOhm N-Ch PowerTrench® MOSFET - SO-8

***Yang: Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC N T/R - Tape and Reel

***ment14 APAC: MOSFET, N CH, 150V, 7.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0173ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:30A

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***et: Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R

***enic: 150V 26A 5.2W 45m´Î@10V5A 4.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

*** Source Electronics: MOSFET N-CH 150V 26A PPAK SO-8

***roFlash: Power Field-Effect Transistor, 7.2A I(D), 150V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ronik: N-CH 150V 26A 80mOhm PPSO-8 RoHSconf

***ure Electronics: N-CH POWERPAK SO-8 WFET 150V 45MOHM @ 10V

***ment14 APAC: N-CHANNEL 150-V (D-S) WFET; N-CHANNEL 150-V (D-S) WFET

***nell: N CHANNEL MOSFET, 150V, 26A, SOIC-8; Tra; N CHANNEL MOSFET, 150V, 26A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V

***ure Electronics: Single N-Channel 150 V 0.045 Ohm Surface Mount Power Mosfet - PowerPAK SO-8

*** Source Electronics: MOSFET N-CH 150V 26A PPAK SO-8 / Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,DIODE,150V,26A,SO-8 PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.2A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V

***ark: PT5 150V/20V Nch Power Trench MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM

***emi: N-Channel PowerTrench® MOSFET 150V, 30A, 25mΩ

***ment14 APAC: MOSFET, N-CH, 150V, 30A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Source Voltage Vds:150V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 6.7A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N-CH, 150V, 30A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.9V; Power Dissipation Pd: 96W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
BSB165N15NZ3GXUMA1 DISTI # V72:2272_06377741	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R RoHS: Compliant	3781	3000:$1.6680 1000:$1.6880 500:$2.0050 250:$2.2330 100:$2.3510 25:$2.4129 10:$2.6810 1:$3.4969
BSB165N15NZ3GXUMA1 DISTI # V36:1790_06377741	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R RoHS: Compliant	0	5000000:$1.4100 2500000:$1.4120 500000:$1.4910 50000:$1.6090 5000:$1.6270
BSB165N15NZ3GXUMA1 DISTI # BSB165N15NZ3GXUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5202In Stock	1000:$1.8331 500:$2.1736 100:$2.5533 10:$3.1160 1:$3.4700
BSB165N15NZ3GXUMA1 DISTI # BSB165N15NZ3GXUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5202In Stock	1000:$1.8331 500:$2.1736 100:$2.5533 10:$3.1160 1:$3.4700
BSB165N15NZ3GXUMA1 DISTI # BSB165N15NZ3GXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 9A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.6272
BSB165N15NZ3GXUMA1 DISTI # 26194896	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R RoHS: Compliant	3781	4:$3.4969
BSB165N15NZ3GXUMA1 DISTI # BSB165N15NZ3GXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A CanPAK T/R - Bulk (Alt: BSB165N15NZ3GXUMA1) Min Qty: 232 Container: Bulk	Americas - 0	1160:$1.2900 2320:$1.2900 696:$1.3900 232:$1.4900 464:$1.4900
BSB165N15NZ3GXUMA1 DISTI # SP000617000	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A CanPAK T/R (Alt: SP000617000) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€1.3900 20000:€1.4900 30000:€1.4900 10000:€1.6900 5000:€2.0900
BSB165N15NZ3GXT DISTI # BSB165N15NZ3GXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 9A 7-Pin WDSON - Tape and Reel (Alt: BSB165N15NZ3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	30000:$1.4900 50000:$1.4900 10000:$1.5900 20000:$1.5900 5000:$1.6900
BSB165N15NZ3 G DISTI # 726-BSB165N15NZ3G	Infineon Technologies AG	MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 RoHS: Compliant	4500	1:$3.2000 10:$2.7200 100:$2.3600 250:$2.2400 500:$2.0100 1000:$1.6900 2500:$1.6100 5000:$1.5500
BSB165N15NZ3GXUMA1 DISTI # 726-BSB165N15NZ3GXUM	Infineon Technologies AG	MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 RoHS: Compliant	4806	1:$3.2000 10:$2.7200 100:$2.3600 250:$2.2400 500:$2.0100 1000:$1.6900 2500:$1.6100 5000:$1.5500
BSB165N15NZ3GXUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 9A I(D), 150V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	25830	1000:$1.4200 500:$1.5000 100:$1.5600 25:$1.6200 1:$1.7500
BSB165N15NZ3GXUMA1 DISTI # 2480771RL	Infineon Technologies AG	MOSFET, N-CH, 150V, 45A, WDSON-2 RoHS: Compliant	0	2500:$2.4800 1000:$2.6100 500:$3.1000 250:$3.4500 100:$3.6400 10:$4.1900 1:$4.9200
BSB165N15NZ3GXUMA1 DISTI # 2480771	Infineon Technologies AG	MOSFET, N-CH, 150V, 45A, WDSON-2 RoHS: Compliant	0	2500:$2.4800 1000:$2.6100 500:$3.1000 250:$3.4500 100:$3.6400 10:$4.1900 1:$4.9200
BSB165N15NZ3GXUMA1 DISTI # 2480771	Infineon Technologies AG	MOSFET, N-CH, 150V, 45A, WDSON-2	0	500:£1.5400 250:£1.7100 100:£1.8000 10:£2.0800 1:£2.7500

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BSB165N15NZ3GXUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes