IPL65R650C6SATMA1

Mfr. #:: IPL65R650C6SATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 650V 6.7A ThinPAK 5x6
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R650C6SATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPL65R650C6SATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: ThinPAK-56-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 6.7 A

Rds On - Drain-Source Resistance:: 650 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 21 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 56.8 W

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 6 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 5 mm

Brand:: Infineon Technologies

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 80 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: IPL65R650C6S SP001163082

Unit Weight:: 0.002677 oz

Tags: IPL65R6, IPL65R, IPL65, IPL6, IPL

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

IPL65R650C6SATMA1 Description

***ical: Trans MOSFET N-CH 650V 6.7A 8-Pin Thin-PAK EP T/R

***et: Trans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R

***ineon SCT: The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS

***ineon: The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting

*** Source Electronics: Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor

*** Stop Electro: Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS Power Mosfet - TO-252-3

***roFlash: Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,7.3A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ark: Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes

***icroelectronics: N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) DPAK

***r Electronics: Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ure Electronics: N-Channel 600 V 650 mOhm 12 nC CoolMOS P6 Power Transistor - ThinPAK 5x6

***ark: Mosfet, N-Ch, 600V, 6.7A, Tson; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.59Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Infineon IPL60R650P6SATMA1

***ineon: The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting

***icroelectronics: N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package

*** Electronics: STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

***ark: MOSFET, N-CH, 650V, 7A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes

***nell: MOSFET, N CHANNEL, 650V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in DPAK package

***ark: MOSFET, N CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; On Resistance Rds(on):0.56ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IPL65R650C6SATMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R650C6SATMA1 DISTI # IPL65R650C6SATMA1-ND	Infineon Technologies AG	MOSFET N-CH 8TSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.6806
IPL65R650C6SATMA1 DISTI # IPL65R650C6SATMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL65R650C6SATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.6189 30000:$0.6299 20000:$0.6519 10000:$0.6759 5000:$0.7019
IPL65R650C6SATMA1 DISTI # SP001163082	Infineon Technologies AG	Trans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R (Alt: SP001163082) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.5789 30000:€0.6239 20000:€0.6759 10000:€0.7379 5000:€0.9019
IPL65R650C6SATMA1 DISTI # 726-IPL65R650C6SATMA	Infineon Technologies AG	MOSFET N-Ch 650V 6.7A ThinPAK 5x6 RoHS: Compliant	2480	1:$1.6000 10:$1.3600 100:$1.0400 500:$0.9270 1000:$0.7320 5000:$0.6490 10000:$0.6240

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IPL65R650C6SATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes