IPL65R210CFDAUMA1

Mfr. #:: IPL65R210CFDAUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER BEST IN CLASS
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R210CFDAUMA1 Datasheet
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More Information:: IPL65R210CFDAUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Vds - Drain-Source Breakdown Voltage:: 650 V

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS CFDA

Width:: 8 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: IPL65R210CFD SP000949256

Tags: IPL65R2, IPL65R, IPL65, IPL6, IPL

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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IPL65R210CFDAUMA1 Description

***et: Transistor MOSFET N-CH 700V 16.6A 4-Pin VSON T/R

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS

*** Electronic Components: MOSFET HIGH POWER BEST IN CLASS

***et Europe: MOS Power Transistors HV (>= 200V)

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***ure Electronics: Single N-Channel 650V 190 mOhm 68 nC CoolMOS Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R

***ineon SCT: 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

***icroelectronics: N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 650 V 0.18 Ohm 35 nC 170 W SMT MDmesh M2 Mosfet - D2PAK

***ical: Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 650V, 20A, 170W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 170W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package

***sible Micro: (CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5

***ure Electronics: N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK

***ronik: N-CH 700V 21A 180mOhm TO-263

***S: French Electronic Distributor since 1988

*** Europe: N-CH SINGLE 650V TO263

***ure Electronics: Single N-Channel 650 V 165 mOhm 86 nC CoolMOS Power Mosfet - ThinPAK 8x8

***ical: Trans MOSFET N-CH 650V 21.3A Automotive 4-Pin VSON EP T/R

***el Electronic: 0603 2.7 nF 50 V ±5% Tolerance C0G SMT Multilayer Ceramic Capacitor

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS

***p One Stop: 650V COOL MOS CFD2 POWER TRANSISTOR

***ronik: N-CH 650V 21,3A 165mOhm ThinPAK

*** Services: CoC and 2-years warranty / RFQ for pricing

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***icroelectronics: N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT 8x8 HV package

***ical: Trans MOSFET N-CH Si 650V 15A 5-Pin Power Flat T/R

***(Formerly Allied Electronics): MOSFET N-Channel 650V 15A PowerFLAT HV

***r Electronics: Power Field-Effect Transistor, 15A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronic Components: MOSFET N-Ch 650V .198Ohm 15A MDmesh M5

***icroelectronics SCT: Power MOSFETs, 650V, 15A, PowerFLAT 8x8 HV, Tape and Reel

***ronik: N-CH 650V 15A 210mOhm PwFLAT8x8

*** International: MOSFET N CH 650V 15A PWRFLT8X8HV

***el Electronic: Telecom Transformer 1:1 40Term. Gull Wing SMD

***i-Key: MOSFET N-CH 650V 15A PWRFLAT HV

***et: STMICROELECTRONICS STL22N65M5 MOSFETS

IPL65R210CFDAUMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R210CFDAUMA1 DISTI # 32680823	Infineon Technologies AG	Trans MOSFET N-CH 650V 16.6A Automotive T/R RoHS: Compliant	3000	3000:$1.5522
IPL65R210CFDAUMA1 DISTI # IPL65R210CFDAUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.6315
IPL65R210CFDAUMA1 DISTI # IPL65R210CFDAUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R210CFDAUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	12000:$1.3900 18000:$1.3900 30000:$1.3900 6000:$1.4900 3000:$1.5900
IPL65R210CFDAUMA1 DISTI # IPL65R210CFD	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPL65R210CFD) RoHS: Compliant Min Qty: 3000	Asia - 0	150000:$1.4117 75000:$1.4297 30000:$1.4483 15000:$1.4674 9000:$1.5070 6000:$1.5489 3000:$1.5931
IPL65R210CFDAUMA1 DISTI # SP000949256	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP000949256) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€1.1900 18000:€1.2900 12000:€1.3900 6000:€1.4900 3000:€1.7900
IPL65R210CFDAUMA1 DISTI # 726-IPL65R210CFDAUMA	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS	0	1:$2.9500 10:$2.5000 100:$2.1700 250:$2.0600 500:$1.8500 1000:$1.5600 3000:$1.4800

Image	Part #	Description
	Mfr.#: IPL65R210CFDAUMA1 OMO.#: OMO-IPL65R210CFDAUMA1	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R210CFDAUMA2 OMO.#: OMO-IPL65R210CFDAUMA2	MOSFET
	Mfr.#: IPL65R210CFDAUMA2 OMO.#: OMO-IPL65R210CFDAUMA2-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: IPL65R210CFDAUMA1 OMO.#: OMO-IPL65R210CFDAUMA1-INFINEON-TECHNOLOGIES	MOSFET HIGH POWER BEST IN CLASS

IPL65R210CFDAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes