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BSB015N04NX3 G

BSB015N04NX3 G
Mfr. #:
BSB015N04NX3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSB015N04NX3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
WDSON-2-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon Technologies
Fall Time:
7.6 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
6.4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
36 ns
Typical Turn-On Delay Time:
23 ns
Part # Aliases:
BSB015N04NX3GXUMA1 BSB15N4NX3GXT SP000597852
Tags
BSB015N, BSB015, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSB015N04NX3GXUMA1
DISTI # V72:2272_06378249		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5291
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # 30729203		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 5:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 5-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB015N04NX3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.4900
  • 10000:$1.4900
  • 20000:$1.3900
  • 30000:$1.3900
  • 50000:$1.2900
BSB015N04NX3GXUMA1
DISTI # 34AC1373		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes8825
  • 1:$3.4700
  • 10:$3.0600
  • 25:$2.7600
  • 50:$2.4600
  • 100:$2.1500
  • 250:$1.8400
  • 500:$1.6800
  • 1000:$1.5900
BSB015N04NX3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		95
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
BSB015N04NX3 G
DISTI # 726-BS726-B015N04NX3		Infineon Technologies AGMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
RoHS: Compliant		0
  • 1:$2.8800
  • 10:$2.4500
  • 100:$2.1200
  • 250:$2.0100
  • 500:$1.8100
  • 1000:$1.5300
  • 2500:$1.4500
  • 5000:$1.3900
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:$3.2200
  • 10:$3.0100
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.3900
  • 1000:$2.2700
BSB015N04NX3GXUMA1
DISTI # C1S322000618394		Infineon Technologies AGMOSFETs
RoHS: Compliant		3034
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:£3.7900
  • 10:£3.0100
  • 100:£2.4600
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSB015N04NX3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.87
$2.87
10
$2.44
$24.40
100
$2.11
$211.00
250
$2.01
$502.50
500
$1.80
$900.00
1000
$1.52
$1 520.00
2500
$1.44
$3 600.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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