IPB35N10S3L-26

Mfr. #:: IPB35N10S3L-26
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
Lifecycle:: New from this manufacturer.
Datasheet:: IPB35N10S3L-26 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB35N10S3L-26 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 35 A

Rds On - Drain-Source Resistance:: 20.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 39 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 71 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS-T

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 3 ns

Product Type:: MOSFET

Rise Time:: 4 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18 ns

Typical Turn-On Delay Time:: 6 ns

Part # Aliases:: IPB35N10S3L26ATMA1 IPB35N1S3L26XT SP000776044

Unit Weight:: 0.139332 oz

Tags: IPB35N10, IPB35N, IPB35, IPB3, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB35N10S3L-26 More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB35N10S3L26ATMA1 DISTI # V72:2272_06384799	Infineon Technologies AG	Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	858	500:$0.8098 250:$0.8979 100:$0.9339 25:$1.1655 10:$1.2365 1:$1.5988
IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.7091
IPB35N10S3L26ATMA1 DISTI # 33079428	Infineon Technologies AG	Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.5674
IPB35N10S3L26ATMA1 DISTI # 26195596	Infineon Technologies AG	Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	858	12:$1.5988
IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.5719 6000:$0.5819 4000:$0.6019 2000:$0.6249 1000:$0.6479
IPB35N10S3L26ATMA1 DISTI # SP000776044	Infineon Technologies AG	Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.5919 6000:€0.6319 4000:€0.6949 2000:€0.7779 1000:€0.9969
IPB35N10S3L26ATMA1 DISTI # 34AC1657	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes	2039	500:$0.8650 250:$0.9210 100:$0.9780 50:$1.0800 25:$1.1700 10:$1.2700 1:$1.4800
IPB35N10S3L26ATMA1 DISTI # 726-IPB35N10S3L26ATM	Infineon Technologies AG	MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant	1442	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6760 2000:$0.5990 10000:$0.5770
IPB35N10S3L-26 DISTI # 726-IPB35N10S3L-26	Infineon Technologies AG	MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant	1110	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6760 2000:$0.5990 10000:$0.5770
IPB35N10S3L-26	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 100V, 0.0322OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	248	186:$0.7290 70:$0.8100 1:$1.6200
IPB35N10S3L26ATMA1 DISTI # 2781070	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant	2024	100:$1.2800 25:$1.5700 5:$1.8100
IPB35N10S3L26ATMA1 DISTI # 2781070	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-263	2039	500:£0.6540 250:£0.6960 100:£0.7380 10:£1.0100 1:£1.2800

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPB35N10S3L-26 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.47~~; ~~$1.47~~

10: ~~$1.26~~; ~~$12.60~~

100: ~~$0.97~~; ~~$96.80~~

500: ~~$0.86~~; ~~$428.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes