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FDP16N50

FDP16N50
Mfr. #:
FDP16N50
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 500V 16A NCH MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDP16N50 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP16N50 DatasheetFDP16N50 Datasheet (P4-P6)FDP16N50 Datasheet (P7-P9)FDP16N50 Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
390 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
200 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
23 S
Fall Time:
80 ns
Product Type:
MOSFET
Rise Time:
150 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
65 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.090478 oz
Tags
FDP16N, FDP16, FDP1, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 16A TO-220
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.38ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:16A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:64A; Pin Configuration:G(1),D(2)S(3); Power, Pd:200W; Resistance, Rds on Max:0.38ohm; Resistance, Rds on Typ.:0.31ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.63°C/W; Typ Capacitance Ciss:1495pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V
Part # Mfg. Description Stock Price
FDP16N50
DISTI # FDP16N50-ND		ON SemiconductorMOSFET N-CH 500V 16A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FDP16N50
    DISTI # 512-FDP16N50    		ON SemiconductorMOSFET 500V 16A NCH MOSFET
    RoHS: Compliant    		0
      FDP16N50Fairchild Semiconductor CorporationPower Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		14258
      • 1000:$1.1800
      • 500:$1.2500
      • 100:$1.3000
      • 25:$1.3500
      • 1:$1.4600
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      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of FDP16N50 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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