DMN33D8LTQ-13

DMN33D8LTQ-13
Mfr. #:
DMN33D8LTQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS 25V-30V
Lifecycle:
New from this manufacturer.
Datasheet:
DMN33D8LTQ-13 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
DMN33D8LTQ-13 more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-523-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
115 mA
Rds On - Drain-Source Resistance:
5 Ohms
Vgs th - Gate-Source Threshold Voltage:
0.8 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
0.55 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
300 mW
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Diodes Incorporated
Fall Time:
13.6 ns
Product Type:
MOSFET
Rise Time:
2.6 ns
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18.2 ns
Typical Turn-On Delay Time:
2.9 ns
Tags
DMN33D8LT, DMN33D, DMN33, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Image Part # Description
DMN33D8LDW-7

Mfr.#: DMN33D8LDW-7

OMO.#: OMO-DMN33D8LDW-7

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LT-13

Mfr.#: DMN33D8LT-13

OMO.#: OMO-DMN33D8LT-13

MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LT-7

Mfr.#: DMN33D8LT-7

OMO.#: OMO-DMN33D8LT-7

MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LV-7

Mfr.#: DMN33D8LV-7

OMO.#: OMO-DMN33D8LV-7

MOSFET 2N7002 Family
DMN33D8LTQ-7

Mfr.#: DMN33D8LTQ-7

OMO.#: OMO-DMN33D8LTQ-7

MOSFET MOSFET BVDSS 25V-30V
DMN33D8LTQ-13

Mfr.#: DMN33D8LTQ-13

OMO.#: OMO-DMN33D8LTQ-13

MOSFET MOSFET BVDSS 25V-30V
DMN33D8LDW-13

Mfr.#: DMN33D8LDW-13

OMO.#: OMO-DMN33D8LDW-13

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LDW-13

Mfr.#: DMN33D8LDW-13

OMO.#: OMO-DMN33D8LDW-13-DIODES

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LT-13

Mfr.#: DMN33D8LT-13

OMO.#: OMO-DMN33D8LT-13-DIODES

MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LDW-7

Mfr.#: DMN33D8LDW-7

OMO.#: OMO-DMN33D8LDW-7-DIODES

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of DMN33D8LTQ-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.45
$0.45
10
$0.29
$2.93
100
$0.13
$12.60
1000
$0.10
$97.00
2500
$0.07
$185.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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