PartNumber | DMN33D8LDW-7 | DMN33D8LT-13 | DMN33D8LDW-13 |
Description | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-523-3 | SOT-363-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 250 mA | - | - |
Rds On Drain Source Resistance | 2.4 Ohms, 2.4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 1.23 nC, 1.23 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 350 mW | - | - |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Series | DMN33 | DMN33 | DMN33 |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 13.6 ns, 13.6 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2.6 ns, 2.6 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 18.2 ns, 18.2 ns | - | - |
Typical Turn On Delay Time | 2.9 ns, 2.9 ns | - | - |
Unit Weight | 0.000265 oz | 0.000071 oz | 0.000265 oz |