DMN33D

DMN33D8LDW-7 vs DMN33D8LT-13 vs DMN33D8LDW-13

 
PartNumberDMN33D8LDW-7DMN33D8LT-13DMN33D8LDW-13
DescriptionMOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35WMOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mWMOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6SOT-523-3SOT-363-6
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current250 mA--
Rds On Drain Source Resistance2.4 Ohms, 2.4 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V--
Qg Gate Charge1.23 nC, 1.23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationDualDualDual
Channel ModeEnhancement--
PackagingReelReelReel
SeriesDMN33DMN33DMN33
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time13.6 ns, 13.6 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time2.6 ns, 2.6 ns--
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18.2 ns, 18.2 ns--
Typical Turn On Delay Time2.9 ns, 2.9 ns--
Unit Weight0.000265 oz0.000071 oz0.000265 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN33D8LDW-7 MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LT-13 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LT-7 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LV-7 MOSFET 2N7002 Family
DMN33D8LTQ-7 MOSFET MOSFET BVDSS 25V-30V
DMN33D8LTQ-13 MOSFET MOSFET BVDSS 25V-30V
DMN33D8LDW-13 MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LDW-13 MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LT-13 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LDW-7 MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
DMN33D8LT-7 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
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