DMN33D8LTQ-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-523-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

115 mA

Rds On - Drain-Source Resistance:

5 Ohms

Vgs th - Gate-Source Threshold Voltage:

0.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

0.55 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 mW

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

13.6 ns

Product Type:

MOSFET

Rise Time:

2.6 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18.2 ns

Typical Turn-On Delay Time:

2.9 ns

Tags

DMN33D8LT, DMN33D, DMN33, DMN3, DMN