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IKW40N65H5AXKSA1

IKW40N65H5AXKSA1
Mfr. #:
IKW40N65H5AXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
New from this manufacturer.
Datasheet:
IKW40N65H5AXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.66 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
74 A
Pd - Power Dissipation:
250 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 H5
Packaging:
Tube
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IKW40N65H5A SP001187512
Tags
IKW40N65H, IKW40N65, IKW40N6, IKW40N, IKW4, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 43pF 50volts C0G 2%
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***ure Electronics
IKW30N65ES5: 650 V 30 A Through Hole High Speed 5 IGBT TrenchStop™ - PG-TO-247-3
***ark
Igbt, Single, 650V, 62A, To-247; Dc Collector Current:62A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
The 650 V, 30 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO-247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.35 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 188 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger
***ical
Trans IGBT Chip N=-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHS
***nell
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.9pF 50volts C0G +/-0.05pF
***et
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***(Formerly Allied Electronics)
NGTB35N65FL2WG; IGBT Transistor; 70 A 650 V; 1MHz; 3-Pin TO-247
***ure Electronics
NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ark
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***(Formerly Allied Electronics)
NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, TO-247
***ment14 APAC
IGBT, SINGLE, 650V, 70A, TO-247-3
***i-Key
IGBT FIELD STOP 650V 70A TO247-3
***nell
IGBT, SINGLE, 650V, 70A, TO-247-3; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
IKW40N65H5AXKSA1
DISTI # 31587549		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 240:$3.6330
IKW40N65H5AXKSA1
DISTI # IKW40N65H5AXKSA1-ND		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
  • 240:$5.3107
IKW40N65H5AXKSA1
DISTI # IKW40N65H5AXKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW40N65H5AXKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$3.5900
  • 2400:$3.5900
  • 960:$3.7900
  • 480:$3.8900
  • 240:$3.9900
IKW40N65H5AXKSA1
DISTI # 726-IKW40N65H5AXKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		57
  • 1:$6.7600
  • 10:$6.1100
  • 25:$5.8200
  • 100:$5.0500
  • 250:$4.8300
  • 500:$4.4000
Image Part # Description
IKW50N65F5FKSA1

Mfr.#: IKW50N65F5FKSA1

OMO.#: OMO-IKW50N65F5FKSA1

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IKW40N65H5FKSA1

Mfr.#: IKW40N65H5FKSA1

OMO.#: OMO-IKW40N65H5FKSA1

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OMO.#: OMO-IKW50N65H5AXKSA1

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OMO.#: OMO-TLP358H-F--28

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Mfr.#: IKW50N65H5AXKSA1

OMO.#: OMO-IKW50N65H5AXKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V 80A 305W PG-TO247-3
IKW40N65F5AXKSA1

Mfr.#: IKW40N65F5AXKSA1

OMO.#: OMO-IKW40N65F5AXKSA1-INFINEON-TECHNOLOGIES

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Mfr.#: IKW50N65F5FKSA1

OMO.#: OMO-IKW50N65F5FKSA1-INFINEON-TECHNOLOGIES

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IKW40N65H5FKSA1

Mfr.#: IKW40N65H5FKSA1

OMO.#: OMO-IKW40N65H5FKSA1-INFINEON-TECHNOLOGIES

 IGBT Transistors IGBT PRODUCTS
Availability
Stock:
58
On Order:
2041
Enter Quantity:
Current price of IKW40N65H5AXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.76
$6.76
10
$6.11
$61.10
25
$5.82
$145.50
100
$5.05
$505.00
250
$4.83
$1 207.50
500
$4.40
$2 200.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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