IPB200N15N3 G

Mfr. #:: IPB200N15N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB200N15N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPB200N15N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 20 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 31 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Type:: OptiMOS 3 Power-Transistor

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 57 S, 29 S

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: IPB200N15N3GATMA1 IPB2N15N3GXT SP000414740

Unit Weight:: 0.139332 oz

Tags: IPB200N15N3G, IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB200N15N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Infineon Automatic Opening Systems: Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB200N15N3GATMA1 DISTI # V72:2272_06383118	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.3320 500:$1.6700 250:$2.0190 100:$2.0710 25:$2.5570 10:$2.5770 1:$3.2043
IPB200N15N3GATMA1 DISTI # V36:1790_06383118	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	5000:$1.1540 2000:$1.2737 1000:$1.4152
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1748In Stock	500:$1.7634 100:$2.1463 10:$2.6700 1:$2.9700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1748In Stock	500:$1.7634 100:$2.1463 10:$2.6700 1:$2.9700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.2718 2000:$1.3207 1000:$1.4185
IPB200N15N3GATMA1 DISTI # 33258839	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	3000	1000:$1.1436
IPB200N15N3GATMA1 DISTI # 33099117	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	6:$3.2043
IPB200N15N3GATMA1 DISTI # 32663654	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.4152
IPB200N15N3 G DISTI # 30579106	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant	807	10:$2.7500
IPB200N15N3GATMA1 DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 2000	10000:€1.0129 6000:€1.0859 4000:€1.1689 2000:€1.2669 1000:€1.5199
IPB200N15N3 G DISTI # IPB200N15N3G	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB200N15N3G) RoHS: Not Compliant Min Qty: 295 Container: Bulk	Americas - 0	2950:$1.0900 590:$1.1900 885:$1.1900 1475:$1.1900 295:$1.2900
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0900 2000:$1.1900 4000:$1.1900 6000:$1.1900 1000:$1.2900
IPB200N15N3GATMA1 DISTI # 60R2679	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	1434	500:$1.7100 100:$2.0800 10:$2.5900 1:$2.8900
IPB200N15N3 G DISTI # 726-IPB200N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	2723	1:$2.7400 10:$2.3300 100:$1.8600 500:$1.6300 1000:$1.3500 2000:$1.2500 5000:$1.2100
IPB200N15N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	127	1000:$1.2200 500:$1.2900 100:$1.3400 25:$1.4000 1:$1.5100
IPB200N15N3GATMA1 DISTI # 7545443	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK	622	500:£1.1150 250:£1.2700 50:£1.4300 10:£1.5900 2:£2.0050
IPB200N15N3GATMA1 DISTI # 7545443P	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, RL	6544	500:£1.1150 250:£1.2700 50:£1.4300 10:£1.5900
IPB200N15N3 G	Infineon Technologies AG		747
IPB200N15N3GATMA1 DISTI # 1775559	Infineon Technologies AG	MOSFET, N CH, 50A, 150V, PG-TO263-3	1226	500:£1.3900 250:£1.5900 100:£1.7800 10:£2.2100 1:£2.9100

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IPB200N15N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes