NGTB35N65FL2WG

Mfr. #:: NGTB35N65FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 650V/35A FAST IGBT FSII T
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB35N65FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: NGTB35N65FL2WG more Information

Product Attribute
Attribute Value

Manufacturer: ON Semiconductor

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Unit-Weight: 1.340411 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Configuration: Single

Power-Max: 300W

Reverse-Recovery-Time-trr: 68ns

Current-Collector-Ic-Max: 70A

Voltage-Collector-Emitter-Breakdown-Max: 650V

IGBT-Type: Trench Field Stop

Current-Collector-Pulsed-Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 35A

Switching-Energy: 840μJ (on), 280μJ (off)

Gate-Charge: 125nC

Td-on-off-25°C: 72ns/132ns

Test-Condition: 400V, 35A, 10 Ohm, 15V

Pd-Power-Dissipation: 300 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 650 V

Collector-Emitter-Saturation-Voltage: 2.2 V

Continuous-Collector-Current-at-25-C: 70 A

Gate-Emitter-Leakage-Current: 200 nA

Maximum-Gate-Emitter-Voltage: 20 V

Continuous-Collector-Current-Ic-Max: 70 A

Tags: NGTB35, NGTB3, NGTB, NGT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N65FL2WG More Information

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTB35N65FL2WG DISTI # NGTB35N65FL2WGOS-ND	ON Semiconductor	IGBT 650V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	107In Stock	1020:$1.6464 510:$1.9522 120:$2.2932 30:$2.6460 1:$3.1200
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG) Min Qty: 202 Container: Bulk	Americas - 0	202:$1.5900 204:$1.5900 406:$1.4900 1010:$1.4900 2020:$1.4900
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.3900 10:$1.3900 25:$1.3900 50:$1.3900 100:$1.3900 500:$1.3900 1000:$1.2900
NGTB35N65FL2WG. DISTI # 61AC1092	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	21	1000:$1.2900 1:$1.3900
NGTB35N65FL2WG DISTI # 70547360	ON Semiconductor	NGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9600 20:$2.8200 50:$2.6800 100:$2.5500 200:$2.4200
NGTB35N65FL2WG DISTI # 863-NGTB35N65FL2WG	ON Semiconductor	IGBT Transistors 650V/35A FAST IGBT FSII T RoHS: Compliant	901	1:$2.9700 10:$2.5200 100:$2.1900 250:$2.0800 500:$1.8600 1000:$1.5700 2500:$1.4900 5000:$1.4400
NGTB35N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	210	1000:$1.6300 500:$1.7200 100:$1.7900 25:$1.8700 1:$2.0100
NGTB35N65FL2WG DISTI # 8427898P	ON Semiconductor	IGBT FIELD STOP II 650V 35A DIODE TO247, TU	284	40:£1.7950 20:£1.8900
NGTB35N65FL2WG	ON Semiconductor		2361

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	Mfr.#: NGTB35N65FL2WG OMO.#: OMO-NGTB35N65FL2WG	IGBT Transistors 650V/35A FAST IGBT FSII T
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	Mfr.#: NGTB35N60FL2WG OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 600V/35A FAST IGBT FSII T
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Availability

Stock:: Available
On Order:: 4000
Enter Quantity:

Current price of NGTB35N65FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.13~~; ~~$2.13~~

10: ~~$2.02~~; ~~$20.24~~

100: ~~$1.92~~; ~~$191.70~~

500: ~~$1.81~~; ~~$905.25~~

1000: ~~$1.70~~; ~~$1 704.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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NGTB35N65FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes