MRF6VP11KHR5

Mfr. #:: MRF6VP11KHR5
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 130MHZ 1000W NI1230
Lifecycle:: New from this manufacturer.
Datasheet:: MRF6VP11KHR5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: MRF6VP11KHR5 more Information

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Vds - Drain-Source Breakdown Voltage:: 110 V

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-1230

Packaging:: Reel

Configuration:: Dual Common Source

Height:: 5.08 mm

Length:: 41.28 mm

Series:: MRF6VP11KH

Type:: RF Power MOSFET

Width:: 10.29 mm

Brand:: NXP / Freescale

Channel Mode:: Enhancement

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: - 6 V, 10 V

Part # Aliases:: 935309981178

Unit Weight:: 0.464036 oz

Tags: MRF6VP11KHR, MRF6VP11KH, MRF6VP11, MRF6VP1, MRF6VP, MRF6V, MRF6, MRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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Step3:
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MRF6VP11KHR5 Description

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 150 MHz, 1000 W, Typ Gain in dB is 26 @ 130 MHz, 50 V, LDMOS, SOT1787

***nell: RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

MRF6VP11KHR5 More Information

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
MRF6VP11KHR5 DISTI # V72:2272_07204063	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R	50	25:$240.2000 10:$250.5900 1:$263.7300
MRF6VP11KHR5 DISTI # MRF6VP11KHR5CT-ND	NXP Semiconductors	FET RF 2CH 110V 130MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	69In Stock	10:$256.6320 1:$267.9500
MRF6VP11KHR5 DISTI # MRF6VP11KHR5DKR-ND	NXP Semiconductors	FET RF 2CH 110V 130MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	69In Stock	10:$256.6320 1:$267.9500
MRF6VP11KHR5 DISTI # MRF6VP11KHR5TR-ND	NXP Semiconductors	FET RF 2CH 110V 130MHZ NI-1230 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	50In Stock	50:$243.6612
MRF6VP11KHR5 DISTI # 30531988	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R	50	25:$244.6000 10:$250.6000 1:$263.7300
MRF6VP11KHR5 DISTI # MRF6VP11KHR5	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin NI-1230 T/R - Tape and Reel (Alt: MRF6VP11KHR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 50	50:$238.6900 100:$238.0900 200:$237.4900 300:$236.8900 500:$236.2900
MRF6VP11KHR5 DISTI # MRF6VP11KHR5	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin NI-1230 T/R (Alt: MRF6VP11KHR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Asia - 0
MRF6VP11KHR5. DISTI # 81AC9283	NXP Semiconductors	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-150 MHZ, 1000 W, 50 V ROHS COMPLIANT: YES	50	1:$243.6600 50:$243.6600
MRF6VP11KHR5	Freescale Semiconductor	RF Power Field-Effect Transistor RoHS: Compliant	6	1000:$241.0500 500:$253.7400 100:$264.1700 25:$275.4900 1:$296.6800
MRF6VP11KHR5 DISTI # 841-MRF6VP11KHR5	NXP Semiconductors	RF MOSFET Transistors VHV6 130MHZ 1000W NI1230 RoHS: Compliant	80	1:$267.9600 5:$261.9900 10:$256.6300 25:$252.8400 50:$243.6600
MRF6VP11KHR5 DISTI # MRF6VP11KHR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	376	1:$252.5200 10:$245.8800 25:$242.6900
MRF6VP11KHR5 DISTI # 2985244	NXP Semiconductors	LATERAL N-CH BROADBAND RF POWER MOSFET RoHS: Compliant	0	1:$372.0900 5:$356.8000
MRF6VP11KHR5 DISTI # 2985244	NXP Semiconductors	LATERAL N-CH BROADBAND RF POWER MOSFET RoHS: Compliant	0	1:£203.3300 5:£194.9700
MRF6VP11KHR5 DISTI # C1S537101501849	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R RoHS: Compliant	50	25:$244.6000 10:$250.6000 1:$263.7300

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Availability

Stock:: 32
On Order:: 2015
Enter Quantity:

Current price of MRF6VP11KHR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$267.96~~; ~~$267.96~~

5: ~~$261.99~~; ~~$1 309.95~~

10: ~~$256.63~~; ~~$2 566.30~~

25: ~~$252.84~~; ~~$6 321.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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MRF6VP11KHR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes