OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPZA60R180P7XKSA1

IPZA60R180P7XKSA1
Mfr. #:
IPZA60R180P7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPZA60R180P7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPZA60R180P7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
PG-TO-247-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
145 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
72 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
Power MOSFET
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPZA60R180P7 SP001707746
Tags
IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 180 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 18A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPZA60R180P7XKSA1
DISTI # V99:2348_18786396		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor190
  • 1200:$2.0230
  • 720:$2.1400
  • 240:$2.4920
  • 10:$2.9880
  • 1:$3.4530
IPZA60R180P7XKSA1
DISTI # IPZA60R180P7XKSA1-ND		Infineon Technologies AGMOSFET TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		190In Stock
  • 1200:$2.1734
  • 720:$2.5770
  • 240:$3.1825
  • 10:$3.8810
  • 1:$4.3500
IPZA60R180P7XKSA1
DISTI # 29447289		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor190
  • 1200:$2.1747
  • 720:$2.3005
  • 240:$2.6789
  • 10:$3.2121
  • 4:$3.7120
IPZA60R180P7XKSA1
DISTI # IPZA60R180P7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R180P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 240
  • 240:$1.9900
  • 242:$1.8900
  • 482:$1.7900
  • 1200:$1.7900
  • 2400:$1.6900
IPZA60R180P7XKSA1
DISTI # SP001707746		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 4-Pin TO-247 Tube (Alt: SP001707746)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1:€1.7900
  • 10:€1.7900
  • 25:€1.7900
  • 50:€1.6900
  • 100:€1.5900
  • 500:€1.5900
  • 1000:€1.5900
IPZA60R180P7XKSA1
DISTI # 57AC6822		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$2.3400
  • 250:$2.6100
  • 100:$2.7500
  • 50:$2.8900
  • 25:$3.0300
  • 10:$3.1700
  • 1:$3.7300
IPZA60R180P7XKSA1Infineon Technologies AGN-Channel 600 V 180 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
RoHS: Not Compliant		240Tube
  • 240:$1.8900
  • 480:$1.8000
IPZA60R180P7XKSA1
DISTI # 726-IPZA60R180P7XKSA		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		480
  • 1:$3.7300
  • 10:$3.1700
  • 100:$2.7500
  • 250:$2.6100
  • 500:$2.3400
IPZA60R180P7XKSA1
DISTI # XSFP00000153714		Infineon Technologies AGOptoCoupler 1 Channel 8 Pin DIP
RoHS: Compliant		720 in Stock0 on Order
  • 720:$3.4400
  • 240:$3.7800
IPZA60R180P7XKSA1
DISTI # 2862305		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-247
RoHS: Compliant		240
  • 1200:$3.2300
  • 720:$3.8300
  • 240:$4.7300
  • 10:$5.7700
  • 1:$6.4600
IPZA60R180P7XKSA1
DISTI # 2862305		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-247
RoHS: Compliant		240
  • 500:£1.8200
  • 250:£2.0300
  • 100:£2.1400
  • 10:£2.4700
  • 1:£3.2600
Image Part # Description
US1M-E3/61T

Mfr.#: US1M-E3/61T

OMO.#: OMO-US1M-E3-61T

 Rectifiers 1.0 Amp 1000 Volt
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1

 Power Management IC Development Tools 45W adapter evaluation board
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1-INFINEON-TECHNOLOGIES

 EVAL KIT 800V COOLMOS P7
US1M-E3/61T

Mfr.#: US1M-E3/61T

OMO.#: OMO-US1M-E3-61T-VISHAY

 Rectifiers 1.0 Amp 1000 Volt
Availability
Stock:
475
On Order:
2458
Enter Quantity:
Current price of IPZA60R180P7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.73
$3.73
10
$3.17
$31.70
100
$2.75
$275.00
250
$2.61
$652.50
500
$2.34
$1 170.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top