NTMD6601NR2G

Mfr. #:: NTMD6601NR2G
Manufacturer:: ON Semiconductor
Description:: MOSFET 2N-CH 80V 1.1A 8SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: NTMD6601NR2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTMD6601NR2G Datasheet NTMD6601NR2G Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Tags: NTMD6, NTMD, NTM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMD6601NR2G Description

***et: Transistor MOSFET Array Dual N-CH 80V 1.4A 8-Pin SOIC T/R

***emi: Power MOSFET 80V 1.4A 245 mOhm Dual N-Channel SO-8

***ponent Stockers USA: 1100 mA 80 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET

***el Electronic: MOSFET NFET S08D 80V 1.4A 245mOHM

***r Electronics: Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2N-CH 80V 8-SOIC

***ser: MOSFETs .3a, 80V, 0.222 Ohm Dual N-Channel

***i-Key Marketplace: SMALL SIGNAL N-CHANNEL MOSFET

***ure Electronics: Quad N/P-Channel 60 V 0.35/0.60 Ohm 3.2/5.1 nC 0.87 mW Silicon Mosfet SOIC-8

***des Inc SCT: 60V SO8 Complementary enhancement mode MOSFET H-Bridge, 0.87 W, RoHS

***(Formerly Allied Electronics): MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8

***ical: Trans MOSFET N/P-CH 60V 1.39A/1.28A 8-Pin SO T/R

***ark: Mosfet, P/n-Ch, 60V, 1.39A Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET

***emi: Complementary Dual Power MOSFET, 100V, 2A

***et: Trans MOSFET N/P-CH 100V/-100V 2A/-2A 8-Pin SOT-96 T/R

***nell: MOSFET, DUAL N & P-CH, 100V, 2A, SOIC; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Volt

***ark: Mosfet, Dual N & P-Ch, 100V, 2A/150Deg C; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:100V; Drain Source Voltage Vds P Channel:100V; Continuous Drain Current Id N Channel:2A; No. Of Pins:8Pins Rohs Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 100V 2.1A 8-Pin SOIC T/R

*** Source Electronics: Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R / MOSFET 2N-CH 100V 1.6A 8-SOIC

***ure Electronics: ZXMN10A08 Series 100 V 0.25 Ohm N-Channel Enhancement Mode MOSFET -SOIC-8

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.8 W

***i-Key: MOSFET 2N-CH 100V 1.3A 8SOIC

***ter Electronics: 100V/20V, 480/530MO, NCH, DUAL, SO8, 600A GOX, PTI

***rchild Semiconductor: These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***icroelectronics: N-Channel 60V - 0.045 Ohm - 4A - SO-8 STripFET(TM) II POWER MOSFET

***et Europe: Transistor MOSFET Array Dual N-CH 60V 4A 8-Pin SOIC T/R

***ure Electronics: N-Channel 60 V 0.055 O 15 nC Surface Mount STripFET Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET Dual N-Ch 60V 4A STripFET SOIC8

Market price

Part #	Mfg.	Description	Stock	Price
NTMD6601NR2G DISTI # NTMD6601NR2G-ND	ON Semiconductor	MOSFET 2N-CH 80V 1.1A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NTMD6601NR2G DISTI # NTMD6601NR2G	ON Semiconductor	Trans MOSFET N-CH 80V 2.2A 8-Pin SOIC N T/R - Bulk (Alt: NTMD6601NR2G) RoHS: Compliant Min Qty: 625 Container: Bulk	Americas - 0	6250:$0.4929 3125:$0.5059 1875:$0.5119 1250:$0.5189 625:$0.5219
NTMD6601NR2G DISTI # 863-NTMD6601NR2G	ON Semiconductor	MOSFET NFET S08D 80V 1.4A 245mOHM RoHS: Compliant	0
NTMD6601NR2G	ON Semiconductor	Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	61711	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500

NTMD6601NR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes