NTMD6601NR2G

NTMD6601NR2G
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
600
0
25-10
C, CAPACITANCE (pF)
V
GS
V
DS
T
J
= 25°C
V
GS
= 0 VV
DS
= 0 V
C
rss
C
iss
C
oss
C
rss
C
iss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
-5 0 5 10 15 20
200
300
500
100
400
0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 8. Gate-To-Source and Drain-To-Source
Voltage versus Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
I
D
= 1.0 A
T
J
= 25°C
QT
Q2
2
4
6
8
10
Q1
0123 456789
t, TIME (ns)
R
G
, GATE RESISTANCE (W)
1 10 100
1000
100
1
V
DD
= 64 V
I
D
= 2.2 A
V
GS
= 5.0 V
t
r
t
f
td(off)
t
d(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
10
0
0
I
S
, SOURCE CURRENT (A)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
V
GS
= 0 V
T
J
= 25°C
0.2 1
0.5
1
1.5
2
2.5
0.4 0.6 0.8
1001010.1
10
1
0.1
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 15 V
SINGLE PULSE
T
C
= 25°C
dc
10 ms
1 ms
100 ms
175755025
20
15
5
0
E
AS
, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
10
25
100 125
I
D
= 7.0 A
150
NTMD6601NR2G
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
t, TIME (s)
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02 1.0E+03
0.001
10
0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
107.55 F1.7891 F0.3074 F0.0854 F0.0154 F
Chip
Ambient
Normalized to qja at 10s.
NTMD6601NR2G
http://onsemi.com
6
PACKAGE DIMENSIONS
SO-8 NB
CASE 751-07
ISSUE AJ
SEATING
PLANE
1
4
58
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
-X-
-Y-
G
M
Y
M
0.25 (0.010)
-Z-
Y
M
0.25 (0.010) Z
S
X
S
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒ
mm
inches
Ǔ
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
NTMD6601N/D
LITERATURE FULFILLMENT:
 Literature Distribution Center for ON Semiconductor
 P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.

NTMD6601NR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 80V 1.1A 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet