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NTMD6601NR2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 0
1 Publication Order Number:
NTMD6601N/D
NTMD6601NR2G
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
•Low R
DS(on)
to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•Dual SO-8 Surface Mount Package Saves Board Space
•This is a Pb-Free Device
Applications
•LCD Displays
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Rating Symbol Value Unit
Drain-to-Source Voltage V
DSS
80 V
Gate-to-Source Voltage - Continuous V
GS
±15 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
1.4
A
T
A
= 70°C 1.2
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
1.0 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
1.1
A
T
A
= 70°C 0.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.6 W
Continuous Drain
Current R
q
JA
t < 5 s
(Note 1)
T
A
= 25°C
I
D
2.2
A
T
A
= 70°C 1.7
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
9.0 A
Operating Junction and Storage Temperature T
J
, T
STG
-55 to
+150
°C
Source Current (Body Diode) I
S
1.3 A
Single Pulse Drain-to-Source Avalanche
Energy T
J
= 25C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 7.0 A
pk
, L = 1.0 mH, R
G
= 25 W
EAS 2 5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
120
°C/W
Junction-to-Ambient – t≤ 5 s (Note 1)
R
q
JA
48
Junction-to-FOOT (Drain)
R
q
JF
40
Junction-to-Ambient – Steady State (Note 2)
R
q
JA
200
1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
N-Channel
80 V
245 mW @ 4.5 V
215 mW @ 10 V
R
DS(on)
Max
I
D
Max
V
(BR)DSS
2.2 A
Device Package Shipping
†
ORDERING INFORMATION
NTMD6601NR2G SO-8
(Pb-Free)
2500/Tape & Reel
SO-8
CASE 751
STYLE 11
6601N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
6601N
AYWW
G
1
8
MARKING DIAGRAM
& PIN ASSIGNMENT
S1 G1 S2 G2
D1 D1 D2 D2
D
G
S
NTMD6601NR2G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
80 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
99.8
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25°C
1.0
mA
T
J
= 125°C
25
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±15 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.9 3.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.6
mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 2.2 A
190 215
mW
V
GS
= 5.0 V I
D
= 1.0 A
215 245
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
220 400
pF
Output Capacitance C
OSS
55 100
Reverse Transfer Capacitance C
RSS
16 30
Total Gate Charge Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 40 V, I
D
= 1.0 A
5.0 9.0
nC
Threshold Gate Charge Q
G(TH)
0.4
Gate-to-Source Charge Q
GS
1.0
Gate-to-Drain Charge Q
GD
2.75
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 40 V, I
D
= 1.0 A 9.0 15 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 40 V,
I
D
= 1.0 A, R
G
= 27 W
21 35
ns
Rise Time t
r
62 105
Turn-Off Delay Time t
d(OFF)
52 85
Fall Time t
f
50 85
Turn-On Delay Time t
d(ON)
V
GS
= 10 V, V
DD
= 40 V,
I
D
= 2.5 A, R
G
= 47 W
15
ns
Rise Time t
r
95
Turn-Off Delay Time t
d(OFF)
50
Fall Time t
f
105
BODY - DRAIN DIODE RATINGS (Note 3)
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
D
= 1.0 A
T
J
= 25°C
0.8 1.0
V
T
J
= 150°C
0.6
ns
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 1.0 A
44
Charge Time T
a
21
Discharge Time T
b
23
Reverse Recovery Time Q
RR
43 86
nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMD6601NR2G
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
I
D
, DRAIN CURRENT (A)
8010
1
100,000
I
DSS
, LEAKAGE (nA)
100-50
2.5
1.5
1
0.5
0
0.3
0
02345
0.05
0.1
0.15
0.2
0.25
0
0
2
1
0
563421
4
3
6
5
2
1
0
1.6 1.8 21 1.2 1.40.6 0.80.40.20
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 3. On-Resistance versus
Drain Current and Temperature
I
D
, DRAIN CURRENT (A)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-To-Source Leakage
Current versus Voltage
V
DS
≥ 10 V
T
J
= 25°C
V
GS
= 0 V
V
GS
= 5.0 V
V
GS
= 5.0 V
T
J
= 150°C
T
J
= -55°C
V
GS
= 5.0 V
I
D
= 1.0 A
4
3
5
V
GS
= 3.5 V
4 V
9 V
8 V
7 V
6 V
5 V
T
J
= 25°C
T
J
= 100°C
2345
0.1
0.2
0.3
0.4
0.5
V
GS
= 10 V
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
-25 0 25 50 75
100
10
20 30 40 50 60
T
J
= 25°C
T
J
= 100°C
0
1
T
J
= -55°C
T
J
= 100°C
1
125 150
2
70
1000
10,000
P1-P3P4-P6

NTMD6601NR2G

Mfr. #:
Buy NTMD6601NR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 80V 1.1A 8SOIC
Lifecycle:
New from this manufacturer.
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