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IPB65R110CFDAATMA1

IPB65R110CFDAATMA1
Mfr. #:
IPB65R110CFDAATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 99.6A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB65R110CFDAATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB65R110CFDAATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
31.2 A
Rds On - Drain-Source Resistance:
99 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
118 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
277.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
68 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
IPB65R110CFDA IPB65R11CFDAXT SP000896402
Unit Weight:
0.068654 oz
Tags
IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R
***ronik
N-CH 650V 31,2A 110mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.099Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8mW; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8mW; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$3.8767
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1000In Stock
  • 500:$4.5846
  • 100:$5.4720
  • 10:$6.6550
  • 1:$7.3900
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1000In Stock
  • 500:$4.5846
  • 100:$5.4720
  • 10:$6.6550
  • 1:$7.3900
IPB65R110CFDAATMA1
DISTI # IPB65R110CFDAATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R110CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.3900
  • 2000:$3.3900
  • 4000:$3.3900
  • 6000:$3.3900
  • 10000:$3.3900
IPB65R110CFDAATMA1
DISTI # SP000896402		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: SP000896402)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€3.5900
  • 2000:€3.3900
  • 4000:€3.2900
  • 6000:€3.0900
  • 10000:€2.7900
IPB65R110CFDAATMA1
DISTI # 13AC9032		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes40
  • 500:$4.0500
  • 250:$4.4400
  • 100:$4.6500
  • 50:$5.0100
  • 25:$5.3600
  • 10:$5.6200
  • 1:$6.2100
IPB65R110CFDA
DISTI # 726-IPB65R110CFDA		Infineon Technologies AGMOSFET N-Ch 650V 99.6A D2PAK-2
RoHS: Compliant		725
  • 1:$6.2100
  • 10:$5.6100
  • 25:$5.3500
  • 100:$4.6400
  • 250:$4.4300
  • 500:$4.0400
  • 1000:$3.5200
  • 2000:$3.3900
IPB65R110CFDAATMA1
DISTI # 726-IPB65R110CFDAATM		Infineon Technologies AGMOSFET N-Ch 650V 99.6A D2PAK-2
RoHS: Compliant		995
  • 1:$6.2100
  • 10:$5.6100
  • 25:$5.3500
  • 100:$4.6400
  • 250:$4.4300
  • 500:$4.0400
  • 1000:$3.5200
  • 2000:$3.3900
IPB65R110CFDAATMA1
DISTI # 2726046		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3
RoHS: Compliant		130
  • 100:£4.2600
  • 10:£4.9100
  • 1:£6.2800
IPB65R110CFDAATMA1
DISTI # 2726046		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-263-3
RoHS: Compliant		40
  • 500:$7.3100
  • 100:$8.7300
  • 10:$10.6100
  • 1:$11.7900
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 125KHZ OFFLINE 800V 4.7 DSO12
Availability
Stock:
875
On Order:
2858
Enter Quantity:
Current price of IPB65R110CFDAATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.21
$6.21
10
$5.61
$56.10
25
$5.35
$133.75
100
$4.64
$464.00
250
$4.43
$1 107.50
500
$4.04
$2 020.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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