IPA65R225C7XKSA1

IPA65R225C7XKSA1
Mfr. #:
IPA65R225C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER BEST IN CLASS
Lifecycle:
New from this manufacturer.
Datasheet:
IPA65R225C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPA65R225C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
199 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
29 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
16.15 mm
Length:
10.65 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
4.85 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
48 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IPA65R225C7 SP001080144
Unit Weight:
0.211644 oz
Tags
IPA65R2, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 650V, 7A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.199Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPA65R225C7XKSA1
DISTI # 31321498
Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
350
  • 5000:$1.0989
  • 2500:$1.1484
  • 1000:$1.2276
  • 500:$1.4850
  • 100:$1.7028
  • 10:$2.1285
IPA65R225C7XKSA1
DISTI # IPA65R225C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.6401
IPA65R225C7XKSA1
DISTI # V36:1790_06378046
Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
0
    IPA65R225C7XKSA1
    DISTI # SP001080144
    Infineon Technologies AGTrans MOSFET N-CH 700V 7A 3-Pin TO-220 FP Tube (Alt: SP001080144)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 1500
    • 1000:€1.0129
    • 500:€1.0499
    • 100:€1.0909
    • 50:€1.1349
    • 25:€1.1819
    • 10:€1.2889
    • 1:€1.4179
    IPA65R225C7XKSA1
    DISTI # IPA65R225C7XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 7A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R225C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 5000:$1.0819
    • 3000:$1.1019
    • 2000:$1.1399
    • 1000:$1.1829
    • 500:$1.2269
    IPA65R225C7XKSA1
    DISTI # IPA65R225C7
    Infineon Technologies AGTrans MOSFET N-CH 700V 7A 3-Pin TO-220 FP Tube (Alt: IPA65R225C7)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Asia - 0
    • 25000:$1.0785
    • 12500:$1.0923
    • 5000:$1.1065
    • 2500:$1.1211
    • 1500:$1.1514
    • 1000:$1.1833
    • 500:$1.2171
    IPA65R225C7XKSA1
    DISTI # 33AC5086
    Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.199ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes163
    • 5000:$1.1100
    • 2500:$1.1600
    • 1000:$1.2400
    • 500:$1.5000
    • 100:$1.7200
    • 10:$2.1500
    • 1:$2.5300
    IPA65R225C7
    DISTI # 726-IPA65R225C7
    Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
    RoHS: Compliant
    0
    • 1:$2.5000
    • 10:$2.1300
    • 100:$1.7000
    • 500:$1.4900
    • 1000:$1.2300
    IPA65R225C7XKSA1
    DISTI # 726-IPA65R225C7XKSA1
    Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
    • 1:$2.5000
    • 10:$2.1300
    • 100:$1.7000
    • 500:$1.4900
    • 1000:$1.2300
    • 2500:$1.1500
    • 5000:$1.1000
    IPA65R225C7XKSA1
    DISTI # IPA65R225C7XKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,7A,29W,TO220FP473
    • 1:$2.6100
    • 3:$2.3500
    • 10:$2.0800
    • 100:$1.8000
    IPA65R225C7XKSA1
    DISTI # 2781345
    Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220
    RoHS: Compliant
    163
    • 1000:$1.6700
    • 500:$1.7400
    • 250:$1.8300
    • 100:$1.9400
    • 10:$2.2000
    • 1:$2.3500
    IPA65R225C7XKSA1
    DISTI # 2781345
    Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220196
    • 100:£1.6100
    • 10:£2.0400
    • 1:£2.6900
    IPA65R225C7XKSA1
    DISTI # XSKDRABS0033125
    Infineon Technologies AG 
    RoHS: Compliant
    1000 in Stock0 on Order
    • 1000:$1.6080
    • 500:$1.7160
    IPA65R225C7XKSA1
    DISTI # IPA65R225C7
    Infineon Technologies AGN-Ch 650V 7A 29W 0,225R TO220-Fullpak
    RoHS: Compliant
    401
    • 1:€5.1500
    • 10:€2.1500
    • 50:€1.1500
    • 100:€1.0600
    Image Part # Description
    IPA65R225C7

    Mfr.#: IPA65R225C7

    OMO.#: OMO-IPA65R225C7

    MOSFET HIGH POWER BEST IN CLASS
    IPA65R225C7XKSA1

    Mfr.#: IPA65R225C7XKSA1

    OMO.#: OMO-IPA65R225C7XKSA1

    MOSFET HIGH POWER BEST IN CLASS
    IPA65R225C7

    Mfr.#: IPA65R225C7

    OMO.#: OMO-IPA65R225C7-1190

    Power Field-Effect Transistor, 7A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPA65R225C7XKSA1

    Mfr.#: IPA65R225C7XKSA1

    OMO.#: OMO-IPA65R225C7XKSA1-INFINEON-TECHNOLOGIES

    MOSFET HIGH POWER BEST IN CLASS
    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of IPA65R225C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.50
    $2.50
    10
    $2.13
    $21.30
    100
    $1.70
    $170.00
    500
    $1.49
    $745.00
    1000
    $1.23
    $1 230.00
    2500
    $1.15
    $2 875.00
    5000
    $1.10
    $5 500.00
    10000
    $1.06
    $10 600.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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