2N5401NLBU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 150 V

Collector- Base Voltage VCBO:

- 160 V

Emitter- Base Voltage VEBO:

- 5 V

Maximum DC Collector Current:

0.6 A

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

240

Height:

4.58 mm

Length:

4.58 mm

Packaging:

Bulk

Width:

3.86 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

- 600 mA

DC Collector/Base Gain hfe Min:

60

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.008466 oz

Tags

2N5401, 2N540, 2N54, 2N5