SI1958DH-T1-E3

Mfr. #:: SI1958DH-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET RECOMMENDED ALT 78-SI1902CDL-T1-GE3
Lifecycle:: New from this manufacturer.
Datasheet:: SI1958DH-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI1958DH-T1-E3 Datasheet SI1958DH-T1-E3 Datasheet (P4-P6)SI1958DH-T1-E3 Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-363-6

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1 mm

Length:: 2.1 mm

Series:: SI1

Width:: 1.25 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI1958DH-E3

Unit Weight:: 0.000265 oz

Tags: SI195, SI19, SI1

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

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Anti-Static Bag

Step3:
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SI1958DH-T1-E3 Description

***et: Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:1300mA; On Resistance, Rds(on):0.340ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, N, SC-70; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Base Number:1958; Continuous Drain Current Id, N Channel:1.3A; Current Id Max:1.3A; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; N-channel Gate Charge:1.2nC; On Resistance Rds(on), N Channel:0.165ohm; On State Resistance @ Vgs = 2.5V:340mohm; On State Resistance @ Vgs = 4.5V:205mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:4A; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.6V; Voltage Vgs th Min:0.6V

Market price

Part #	Mfg.	Description	Stock	Price
SI1958DH-T1-E3 DISTI # SI1958DH-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI1958DH-T1-E3 DISTI # SI1958DH-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI1958DH-T1-E3 DISTI # SI1958DH-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI1958DH-T1-E3 DISTI # 70026192	Vishay Siliconix	DUAL N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	3000:$0.2400 6000:$0.2200 9000:$0.2000
SI1958DH-T1-E3 DISTI # 1497604	Vishay Intertechnologies	MOSFET, DUAL, N, SC-70 RoHS: Compliant	0	1000:$0.4500 500:$0.4660 250:$0.5020 100:$0.5800 25:$0.6690 10:$0.8420 1:$1.0400

Related products

Image

Part #

Description

Mfr.#: SI1958DH-T1-E3

OMO.#: OMO-SI1958DH-T1-E3

MOSFET RECOMMENDED ALT 78-SI1902CDL-T1-GE3

Mfr.#: SI1958DH-T1-E3

OMO.#: OMO-SI1958DH-T1-E3-VISHAY

MOSFET 2N-CH 20V 1.3A SC70-6

Availability

Stock:: Available
On Order:: 5500
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SI1958DH-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes