BSC123N08NS3GATMA1

Mfr. #:: BSC123N08NS3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC123N08NS3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 55 A

Rds On - Drain-Source Resistance:: 12.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 19 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 66 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 22 S

Development Kit:: EVAL_1K4W_ZVS_FB_CFD7

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 18 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: BSC123N08NS3 BSC123N8NS3GXT G SP000443916

Unit Weight:: 0.006067 oz

Tags: BSC123N08NS3G, BSC123N08NS, BSC123N0, BSC123, BSC12, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC123N08NS3GATMA1 Ratings and Reviews

R***r

THANK YOU

2019-06-11

A***n

Quickly reached, well packed and signed all the tapes, thank you!

2019-04-13

V***v

Very long but everything came. Even the defense ended, the dispute did not raise. All right, thank you!

2019-05-25

BSC123N08NS3GATMA1 Description

***ure Electronics: Single N-Channel 80 V 24 mOhm 25 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SuperSO8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 66

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ark: Mosfet Transistor, N Channel, 12 A, 60 V, 9.4 Mohm, 10 V, 4.9 V

***ure Electronics: Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET; N Ch.; 60V; 12A; 9.4 MOHM; 26 NC QG; SO-8; Pb-Free

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

***nell: MOSFET, N, 60V, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipa

***roFlash: Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

*** Electronics: In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672

***emi: N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ

***ure Electronics: N-Channel 60 V 10 mOhms PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 12A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ark: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

*** Source Electronics: OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

***ure Electronics: Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***emi: Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ

***r Electronics: Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***ark: PT7 80V/20V NCH POWERTRENCH MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM

***emi: N-Channel PowerTrench® MOSFET 80V, 44A, 11.7mΩ

***ure Electronics: N-Channel 80 V 11.7 mO 41 nC SMT PowerTrench® Mosfet - POWER 56

***r Electronics: Power Field-Effect Transistor, 10.5A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

Market price

Part #	Mfg.	Description	Stock	Price
BSC123N08NS3GATMA1 DISTI # V72:2272_06384483	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R RoHS: Compliant	4438	75000:$0.3715 30000:$0.3735 15000:$0.3755 6000:$0.4207 3000:$0.4693 1000:$0.4742 500:$0.5939 250:$0.6449 100:$0.6523 50:$0.8040 25:$0.8141 10:$0.8459 1:$0.9583
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	150712In Stock	1000:$0.6183 500:$0.7831 100:$1.0098 10:$1.2780 1:$1.4400
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	150712In Stock	1000:$0.6183 500:$0.7831 100:$1.0098 10:$1.2780 1:$1.4400
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	145000In Stock	5000:$0.5322
BSC123N08NS3GATMA1 DISTI # 31074817	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R RoHS: Compliant	4538	6000:$0.4207 3000:$0.4694 1000:$0.4743 500:$0.5907 250:$0.6450 100:$0.6525 50:$0.8043 25:$0.8142 16:$0.8396
BSC123N08NS3GXT DISTI # BSC123N08NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 45000	5000:$0.4189 10000:$0.4039 20000:$0.3889 30000:$0.3759 50000:$0.3689
BSC123N08NS3GATMA1 DISTI # 60R2515	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 55A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:55A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	5931	1:$1.3200 10:$1.1200 100:$0.8610 500:$0.7610 1000:$0.6010 2500:$0.5570 10000:$0.5130
BSC123N08NS3 G DISTI # 726-BSC123N08NS3G	Infineon Technologies AG	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 RoHS: Compliant	20321	1:$1.2000 10:$1.0200 100:$0.7830 500:$0.6920 1000:$0.5460
BSC123N08NS3GATMA1 DISTI # 726-BSC123N08NS3GATM	Infineon Technologies AG	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 RoHS: Compliant	275	1:$1.2000 10:$1.0200 100:$0.7830 500:$0.6920 1000:$0.5460
BSC123N08NS3GATMA1 DISTI # 7545301	Infineon Technologies AG	MOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, PK	870	5:£0.7440 50:£0.4440 250:£0.3960 1250:£0.3500 2500:£0.3440
BSC123N08NS3GATMA1 DISTI # 7545301P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, RL	14935	50:£0.4440 250:£0.3960 1250:£0.3500 2500:£0.3440
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,80V,55A,66W,PG-TDSON-8	2	1:$0.6309 3:$0.5582 10:$0.4686 100:$0.4114 1000:$0.3703
BSC123N08NS3GATMA1 DISTI # C1S322000210916	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4538	100:$0.6523 50:$0.8040 25:$0.8141 10:$0.8459
BSC123N08NS3GATMA1 DISTI # 1775469	Infineon Technologies AG	MOSFET, N CH, 55A, 80V, PG-TDSON-8 RoHS: Compliant	8181	1:$1.9100 10:$1.6200 100:$1.2400 500:$1.1000 1000:$0.8650 5000:$0.7660
BSC123N08NS3GATMA1 DISTI # 1775469	Infineon Technologies AG	MOSFET, N CH, 55A, 80V, PG-TDSON-8 RoHS: Compliant	6471	5:£0.7590 25:£0.4530 100:£0.4290 250:£0.4040 500:£0.3780

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